The process of lateral facet formation during vapor-liquid-solid nanowire growth is modeled to explain why the crystalline orientation of III-V nanowire side facets is affected by the droplet material. We find that the energy required for facet formation depends on the composition and shape of the liquid droplet. A droplet bulge effect that favors tilted nanofacets is identified: the lateral surface energy is reduced if the angle between droplet and facet is small. Detailed calculations demonstrate that this effect can promote otherwise unfavorable nanowire side facets when high-surface-energy droplet materials like Au are employed
This article tries to circumvent the fundamental uncertainty in the contact angle of droplets cataly...
We study experimentally and theoretically the consumption of the apical gallium droplet that mediate...
We study experimentally and theoretically the consumption of the apical gallium droplet that mediate...
The process of lateral facet formation during vapor-liquid-solid nanowire growth is modeled to expla...
The process of lateral facet formation during vapor-liquid-solid nanowire growth is modeled to expla...
The process of lateral facet formation during vapor-liquid-solid nanowire growth is modeled to expla...
The process of lateral facet formation during vapor-liquid-solid nanowire growth is modeled to expla...
Liquid droplets sitting on nanowire tips constitute the starting point of the vapor-liquid-solid me...
The III-V nanowire structure (zinc blende or wurtzite) grown by the vapor-liquid-solid process is sh...
A liquid droplet sitting on top of a pillar is crucially important for semiconductor nanowire growth...
A liquid droplet sitting on top of a pillar is crucially important for semiconductor nanowire growth...
A liquid droplet sitting on top of a pillar is crucially important for semiconductor nanowire growth...
In this paper, we report that under wetting conditions (or modes) of nanowire (NW) growth, when a no...
The vapor-liquid-solid (VLS) mechanism [1] has been applied extensively as a framework for growing s...
With increasing interest in nanowire-based devices, a thorough understanding of the nanowire shape i...
This article tries to circumvent the fundamental uncertainty in the contact angle of droplets cataly...
We study experimentally and theoretically the consumption of the apical gallium droplet that mediate...
We study experimentally and theoretically the consumption of the apical gallium droplet that mediate...
The process of lateral facet formation during vapor-liquid-solid nanowire growth is modeled to expla...
The process of lateral facet formation during vapor-liquid-solid nanowire growth is modeled to expla...
The process of lateral facet formation during vapor-liquid-solid nanowire growth is modeled to expla...
The process of lateral facet formation during vapor-liquid-solid nanowire growth is modeled to expla...
Liquid droplets sitting on nanowire tips constitute the starting point of the vapor-liquid-solid me...
The III-V nanowire structure (zinc blende or wurtzite) grown by the vapor-liquid-solid process is sh...
A liquid droplet sitting on top of a pillar is crucially important for semiconductor nanowire growth...
A liquid droplet sitting on top of a pillar is crucially important for semiconductor nanowire growth...
A liquid droplet sitting on top of a pillar is crucially important for semiconductor nanowire growth...
In this paper, we report that under wetting conditions (or modes) of nanowire (NW) growth, when a no...
The vapor-liquid-solid (VLS) mechanism [1] has been applied extensively as a framework for growing s...
With increasing interest in nanowire-based devices, a thorough understanding of the nanowire shape i...
This article tries to circumvent the fundamental uncertainty in the contact angle of droplets cataly...
We study experimentally and theoretically the consumption of the apical gallium droplet that mediate...
We study experimentally and theoretically the consumption of the apical gallium droplet that mediate...