The III-V nanowire structure (zinc blende or wurtzite) grown by the vapor-liquid-solid process is shown to be highly dependent on the parameters which shape the droplet at the top of the nanowire. Under conditions that the droplet volume does not exceed a certain value, it is demonstrated that when the nucleation of the solid starts at the solid-liquid-vapor triple line, a relatively large droplet volume and low wetting angle favor the formation of the wurtzite structure. We show that the effective V/III flux ratio is the primary parameter controlling the structure. Most of the III-V semiconductor nanowires (NW) are grown by the vapor-liquid-solid (VLS) process [1], in which a supersaturated liquid droplet initiates NW growth in the (111) d...
Controlling the crystallographic phase purity of III-V nanowires is notoriously difficult, yet this ...
International audienceUnique growth mechanisms involved in semiconductor nanowires (NWs) pave the wa...
We study using in situ transmission electron microscopy the birth of GaAs nanowires from liquid Au-G...
For self-catalyzed nanowires (NWs), reports on how the catalytic droplet initiates successful NW gro...
For self-catalyzed nanowires (NWs), reports on how the catalytic droplet initiates successful NW gro...
The process of lateral facet formation during vapor-liquid-solid nanowire growth is modeled to expla...
The process of lateral facet formation during vapor-liquid-solid nanowire growth is modeled to expla...
The process of lateral facet formation during vapor-liquid-solid nanowire growth is modeled to expla...
The process of lateral facet formation during vapor-liquid-solid nanowire growth is modeled to expla...
A review and expansion of the fundamental processes of the vapor-liquid-solid (VLS) growth mechanism...
III-V-based nanowires usually exhibit random mixtures of wurtzite (WZ) and zinc blende (ZB) crystal ...
ConspectusFunctional materials and devices require nanoscale control of morphology, crystal structur...
ConspectusFunctional materials and devices require nanoscale control of morphology, crystal structur...
The growth of wurtzite GaAs and InAs nanowires with diameters of a few tens of nanometers with negli...
Controlling the crystallographic phase purity of III-V nanowires is notoriously difficult, yet this ...
Controlling the crystallographic phase purity of III-V nanowires is notoriously difficult, yet this ...
International audienceUnique growth mechanisms involved in semiconductor nanowires (NWs) pave the wa...
We study using in situ transmission electron microscopy the birth of GaAs nanowires from liquid Au-G...
For self-catalyzed nanowires (NWs), reports on how the catalytic droplet initiates successful NW gro...
For self-catalyzed nanowires (NWs), reports on how the catalytic droplet initiates successful NW gro...
The process of lateral facet formation during vapor-liquid-solid nanowire growth is modeled to expla...
The process of lateral facet formation during vapor-liquid-solid nanowire growth is modeled to expla...
The process of lateral facet formation during vapor-liquid-solid nanowire growth is modeled to expla...
The process of lateral facet formation during vapor-liquid-solid nanowire growth is modeled to expla...
A review and expansion of the fundamental processes of the vapor-liquid-solid (VLS) growth mechanism...
III-V-based nanowires usually exhibit random mixtures of wurtzite (WZ) and zinc blende (ZB) crystal ...
ConspectusFunctional materials and devices require nanoscale control of morphology, crystal structur...
ConspectusFunctional materials and devices require nanoscale control of morphology, crystal structur...
The growth of wurtzite GaAs and InAs nanowires with diameters of a few tens of nanometers with negli...
Controlling the crystallographic phase purity of III-V nanowires is notoriously difficult, yet this ...
Controlling the crystallographic phase purity of III-V nanowires is notoriously difficult, yet this ...
International audienceUnique growth mechanisms involved in semiconductor nanowires (NWs) pave the wa...
We study using in situ transmission electron microscopy the birth of GaAs nanowires from liquid Au-G...