A liquid droplet sitting on top of a pillar is crucially important for semiconductor nanowire growth via a vapor–liquid–solid (VLS) mechanism. For the growth of long and straight nanowires, it has been assumed so far that the droplet is pinned to the nanowire top and any instability in the droplet position leads to nanowire kinking. Here, using real-time in situ scanning electron microscopy during germanium nanowire growth, we show that the increase or decrease in the droplet wetting angle and subsequent droplet unpinning from the growth interface may also result in the growth of straight nanowires. Because our argumentation is based on terms and parameters common for VLS-grown nanowires, such as the geometry of the droplet and the growth i...
The process of lateral facet formation during vapor-liquid-solid nanowire growth is modeled to expla...
The process of lateral facet formation during vapor-liquid-solid nanowire growth is modeled to expla...
In situ observations during vapor–liquid–solid (VLS) growth of semiconductor nanowires in the chambe...
A liquid droplet sitting on top of a pillar is crucially important for semiconductor nanowire growth...
A liquid droplet sitting on top of a pillar is crucially important for semiconductor nanowire growth...
Formation of nanowire networks is an appealing strategy for demonstration of novel phenomena at nano...
Formation of nanowire networks is an appealing strategy for demonstration of novel phenomena at nano...
Semiconductor nanowires with precisely controlled structure, and hence well-defined electronic and o...
Liquid droplets sitting on nanowire tips constitute the starting point of the vapor-liquid-solid me...
In this paper, we report that under wetting conditions (or modes) of nanowire (NW) growth, when a no...
Semiconductor nanowires offer a versatile platform for the fabrication of new nanoelectronic and nan...
A review and expansion of the fundamental processes of the vapor-liquid-solid (VLS) growth mechanism...
We study using in situ transmission electron microscopy the birth of GaAs nanowires from liquid Au-G...
The vapor-liquid-solid (VLS) mechanism [1] has been applied extensively as a framework for growing s...
Anisotropy in crystal growth of III-V semiconductor nanowires can be enhanced by the assistance of a...
The process of lateral facet formation during vapor-liquid-solid nanowire growth is modeled to expla...
The process of lateral facet formation during vapor-liquid-solid nanowire growth is modeled to expla...
In situ observations during vapor–liquid–solid (VLS) growth of semiconductor nanowires in the chambe...
A liquid droplet sitting on top of a pillar is crucially important for semiconductor nanowire growth...
A liquid droplet sitting on top of a pillar is crucially important for semiconductor nanowire growth...
Formation of nanowire networks is an appealing strategy for demonstration of novel phenomena at nano...
Formation of nanowire networks is an appealing strategy for demonstration of novel phenomena at nano...
Semiconductor nanowires with precisely controlled structure, and hence well-defined electronic and o...
Liquid droplets sitting on nanowire tips constitute the starting point of the vapor-liquid-solid me...
In this paper, we report that under wetting conditions (or modes) of nanowire (NW) growth, when a no...
Semiconductor nanowires offer a versatile platform for the fabrication of new nanoelectronic and nan...
A review and expansion of the fundamental processes of the vapor-liquid-solid (VLS) growth mechanism...
We study using in situ transmission electron microscopy the birth of GaAs nanowires from liquid Au-G...
The vapor-liquid-solid (VLS) mechanism [1] has been applied extensively as a framework for growing s...
Anisotropy in crystal growth of III-V semiconductor nanowires can be enhanced by the assistance of a...
The process of lateral facet formation during vapor-liquid-solid nanowire growth is modeled to expla...
The process of lateral facet formation during vapor-liquid-solid nanowire growth is modeled to expla...
In situ observations during vapor–liquid–solid (VLS) growth of semiconductor nanowires in the chambe...