In this paper, we report that under wetting conditions (or modes) of nanowire (NW) growth, when a nonplanar crystallization front emerges under a catalyst droplet, a shift in the three-phase line (TPL) of the vapor–liquid–crystal interface occurs under thermodynamically stable conditions when the angle with respect to the droplet surface, termed the growth angle, is fixed. The growth angle of the NWs is determined not from a geometrical perspective but on the basis of the physical aspects of the processes occurring around the TPL, revealing a size dependence caused by the influence of linear tension of the three-phase contact of a vapor–liquid crystal. The observed radial periodic instability of the NWs is described according to the size de...
The process of lateral facet formation during vapor-liquid-solid nanowire growth is modeled to expla...
Epitaxial semiconductor nanowires grown with vapor-liquid-solid crystallization processes are very a...
The process of lateral facet formation during vapor-liquid-solid nanowire growth is modeled to expla...
This article tries to circumvent the fundamental uncertainty in the contact angle of droplets cataly...
In this study, we present atomistic simulations and theoretical analyses that reveal a capillary ins...
The vapor-liquid-solid (VLS) mechanism [1] has been applied extensively as a framework for growing s...
A liquid droplet sitting on top of a pillar is crucially important for semiconductor nanowire growth...
A liquid droplet sitting on top of a pillar is crucially important for semiconductor nanowire growth...
Liquid droplets sitting on nanowire tips constitute the starting point of the vapor-liquid-solid me...
A liquid droplet sitting on top of a pillar is crucially important for semiconductor nanowire growth...
Growth of III–V semiconductor nanowires is generally assisted by a liquid particle in order to get a...
A review and expansion of the fundamental processes of the vapor-liquid-solid (VLS) growth mechanism...
Growth of III-V semiconductor nanowires is generally assisted by a liquid particle in order to get a...
International audienceThe droplet contact angle and morphology of the growth interface (vertical, ta...
The process of lateral facet formation during vapor-liquid-solid nanowire growth is modeled to expla...
The process of lateral facet formation during vapor-liquid-solid nanowire growth is modeled to expla...
Epitaxial semiconductor nanowires grown with vapor-liquid-solid crystallization processes are very a...
The process of lateral facet formation during vapor-liquid-solid nanowire growth is modeled to expla...
This article tries to circumvent the fundamental uncertainty in the contact angle of droplets cataly...
In this study, we present atomistic simulations and theoretical analyses that reveal a capillary ins...
The vapor-liquid-solid (VLS) mechanism [1] has been applied extensively as a framework for growing s...
A liquid droplet sitting on top of a pillar is crucially important for semiconductor nanowire growth...
A liquid droplet sitting on top of a pillar is crucially important for semiconductor nanowire growth...
Liquid droplets sitting on nanowire tips constitute the starting point of the vapor-liquid-solid me...
A liquid droplet sitting on top of a pillar is crucially important for semiconductor nanowire growth...
Growth of III–V semiconductor nanowires is generally assisted by a liquid particle in order to get a...
A review and expansion of the fundamental processes of the vapor-liquid-solid (VLS) growth mechanism...
Growth of III-V semiconductor nanowires is generally assisted by a liquid particle in order to get a...
International audienceThe droplet contact angle and morphology of the growth interface (vertical, ta...
The process of lateral facet formation during vapor-liquid-solid nanowire growth is modeled to expla...
The process of lateral facet formation during vapor-liquid-solid nanowire growth is modeled to expla...
Epitaxial semiconductor nanowires grown with vapor-liquid-solid crystallization processes are very a...
The process of lateral facet formation during vapor-liquid-solid nanowire growth is modeled to expla...