Erzeugung von mechanischen und elektrischen Verbindungen zwischen den Oberflaechen zweier Substrate

DE1004015017 A UPAB: 20051125 NOVELTY - Forming a mechanical and electrical connection between two substrates (10) comprises preparing substrates with a metallic layer (16) and a layer of amorphous semiconductor material (18), joining the semiconductor material layers and heating the metallic layers and the semiconductor material layers so that diffusion between the layers occurs to form an alloy. DETAILED DESCRIPTION - Preferred Features: The metallic layer is made from aluminum and the amorphous semiconductor material layer is made from silicon. Joining of the layers takes place at 350 deg. C. The substrates are chips and/or wafers. USE - For forming a mechanical and electrical connection between two substrates. ADVANTAGE - The process is simple