Verfahren und Vorrichtung zum Erzeugen einer elektrischen Kontaktierung zwischen zwei Halbleiterstuecken und Anordnung von Halbleiterstuecken

DE 10323394 A UPAB: 20050117 NOVELTY - A semiconductor (100) is given a first connection face (118) and a pin (112) extending into a recess (110). A second semiconductor (102) is given a connection face (128). The semiconductors are stacked with the faces opposite each other. Pressure is exerted on the pin (112) forming a connection between the faces. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for equipment for making the connection as described, and the assembly so produced. USE - Used to connect semiconductor chip and/or wafer sections, producing stacked assemblies. ADVANTAGE - The process improves the electrical connection in stacked semiconductor assemblies. High localized pressure is exerted, improving over the poor- or non-existent contact between simply-stacked connecting areas. Very high mechanical pressures are achievable locally (e.g. 1000 bar), by exerting e.g. air pressure against the semiconductor. Heating may be applied in addition, to induce plastic flow and pin bonding