Add to ORKGAn undercut mesa laser is fabricated on an n + -InP substrate using a single step liquid phase epitaxy growth process and a planar structure is obtained by using a polyimide filling layer. The lasers operate at fundamental transverse mode due to a scattering loss mechanism. Threshold currents of 18 mA and stable single transverse mode operating at high currents are obtained
The authors report the realisation of a planar buried-heterostructure (PBH) strained multiquantum-we...
InGaAsP/InP nanoheterostructures have been grown by liquid phase epitaxy and their structural perfec...
InGaAsP/InP nanoheterostructures have been grown by liquid phase epitaxy and their structural perfec...
An undercut mesa laser is fabricated on an n + -InP substrate using a single step liquid phase epita...
A new type of buried heterostructure InGaAsP/InP lasers grown by a single-step liquid phase epitaxy ...
A new type of buried heterostructure InGaAsP/InP lasers grown by a single-step liquid phase epitaxy ...
Abstract-Very low threshold currents InGaAsP/InP terrace mesa (T-ME) lasers with an unpassivated sur...
Mode stabilized terrace InGaAsP lasers have been fabricated on semi-insulating InP substrates. The f...
Very low threshold currents InGaAsP/InP terrace mesa (T-ME) lasers with an unpassivated surface have...
Very low threshold InGaAsP terrace lasers on semi-insulating (SI) InP substrate have been fabricated...
Low threshold current GaInAsP/InP groove lasers have been fabricated on semi-insulating InP substrat...
The high-power performance of a groove InGaAsP/InP transverse junction laser fabricated on a semi-in...
Single-growth liquid-phase embedded epitaxy in the GaInAsP/InP system is described, and a new hetero...
Phase-locked arrays of buried-ridge InP/InGaAsP lasers, emitting at 1.3 µm, were grown by liquid pha...
A solid-source molecular beam epitaxy has been used to grow Al-free InGaP/GaAs/InGaAs in-plane side ...
The authors report the realisation of a planar buried-heterostructure (PBH) strained multiquantum-we...
InGaAsP/InP nanoheterostructures have been grown by liquid phase epitaxy and their structural perfec...
InGaAsP/InP nanoheterostructures have been grown by liquid phase epitaxy and their structural perfec...
An undercut mesa laser is fabricated on an n + -InP substrate using a single step liquid phase epita...
A new type of buried heterostructure InGaAsP/InP lasers grown by a single-step liquid phase epitaxy ...
A new type of buried heterostructure InGaAsP/InP lasers grown by a single-step liquid phase epitaxy ...
Abstract-Very low threshold currents InGaAsP/InP terrace mesa (T-ME) lasers with an unpassivated sur...
Mode stabilized terrace InGaAsP lasers have been fabricated on semi-insulating InP substrates. The f...
Very low threshold currents InGaAsP/InP terrace mesa (T-ME) lasers with an unpassivated surface have...
Very low threshold InGaAsP terrace lasers on semi-insulating (SI) InP substrate have been fabricated...
Low threshold current GaInAsP/InP groove lasers have been fabricated on semi-insulating InP substrat...
The high-power performance of a groove InGaAsP/InP transverse junction laser fabricated on a semi-in...
Single-growth liquid-phase embedded epitaxy in the GaInAsP/InP system is described, and a new hetero...
Phase-locked arrays of buried-ridge InP/InGaAsP lasers, emitting at 1.3 µm, were grown by liquid pha...
A solid-source molecular beam epitaxy has been used to grow Al-free InGaP/GaAs/InGaAs in-plane side ...
The authors report the realisation of a planar buried-heterostructure (PBH) strained multiquantum-we...
InGaAsP/InP nanoheterostructures have been grown by liquid phase epitaxy and their structural perfec...
InGaAsP/InP nanoheterostructures have been grown by liquid phase epitaxy and their structural perfec...