Fabrication and parameters of a 1310-nm buried heterostructure operating in the microwave region

InGaAsP/InP nanoheterostructures have been grown by liquid phase epitaxy and their structural perfection has been studied. The nanoheterostructures have been used to fabricate buried mesa laser diodes on a p-InP substrate that emit in the spectral range 1310-1550 nm. The design of the buried mesa stripe diode with the use of a semi-insulating II-VI compound has made it possible to create laser diodes operating at a wavelength of 1310 nm with a telecommunication signal transfer rate of 5.5 GHz. The results are technologically attractive and reproducible. We analyze potentialities for further increasing the optical signal transfer rate. © 2013 Pleiades Publishing, Ltd