Add to ORKGVery low threshold currents InGaAsP/InP terrace mesa (T-ME) lasers with an unpassivated surface have been fabricated on semi-insulating (SI) InP substrates. Fabrication of the lasers involves a single-step liquid phase epitaxial (LPE) growth and a simple etching process. Lasers operating in the fundamental transverse mode with threshold currents as low as 6.3 mA (for a cavity length of 250 μm) have been obtained. Comparison between the unpassivated lasers and those passivated using the mass transport technique is described
An undercut mesa laser is fabricated on an n + -InP substrate using a single step liquid phase epita...
An undercut mesa laser is fabricated on an n + -InP substrate using a single step liquid phase epita...
A new GaInAsP/InP injection laser was fabricated on semi-insulating substrates. The structure utilis...
Abstract-Very low threshold currents InGaAsP/InP terrace mesa (T-ME) lasers with an unpassivated sur...
Very low threshold InGaAsP terrace lasers on semi-insulating (SI) InP substrate have been fabricated...
Low threshold current GaInAsP/InP groove lasers have been fabricated on semi-insulating InP substrat...
Mode stabilized terrace InGaAsP lasers have been fabricated on semi-insulating InP substrates. The f...
Record low CW threshold currents of 16 μA at-room temperature and 21 μA at cryogenic temperature hav...
A new type of buried heterostructure InGaAsP/InP lasers grown by a single-step liquid phase epitaxy ...
A new type of buried heterostructure InGaAsP/InP lasers grown by a single-step liquid phase epitaxy ...
Low threshold InGaAsP/InP injection lasers on semi-insulating InP substrates have been developed wit...
Monolithic integration of 1.3-µm groove lasers and metal-insulator-semiconductor field-effect transi...
Strained-layer InGaAs-GaAs single-quantum-well buried-heterostructure lasers were fabricated by a hy...
Vertical-cavity electrically driven lasers with three GaInAs quantum wells and diameters of several...
Vertical-cavity electrically driven lasers with three GaInAs quantum wells and diameters of several...
An undercut mesa laser is fabricated on an n + -InP substrate using a single step liquid phase epita...
An undercut mesa laser is fabricated on an n + -InP substrate using a single step liquid phase epita...
A new GaInAsP/InP injection laser was fabricated on semi-insulating substrates. The structure utilis...
Abstract-Very low threshold currents InGaAsP/InP terrace mesa (T-ME) lasers with an unpassivated sur...
Very low threshold InGaAsP terrace lasers on semi-insulating (SI) InP substrate have been fabricated...
Low threshold current GaInAsP/InP groove lasers have been fabricated on semi-insulating InP substrat...
Mode stabilized terrace InGaAsP lasers have been fabricated on semi-insulating InP substrates. The f...
Record low CW threshold currents of 16 μA at-room temperature and 21 μA at cryogenic temperature hav...
A new type of buried heterostructure InGaAsP/InP lasers grown by a single-step liquid phase epitaxy ...
A new type of buried heterostructure InGaAsP/InP lasers grown by a single-step liquid phase epitaxy ...
Low threshold InGaAsP/InP injection lasers on semi-insulating InP substrates have been developed wit...
Monolithic integration of 1.3-µm groove lasers and metal-insulator-semiconductor field-effect transi...
Strained-layer InGaAs-GaAs single-quantum-well buried-heterostructure lasers were fabricated by a hy...
Vertical-cavity electrically driven lasers with three GaInAs quantum wells and diameters of several...
Vertical-cavity electrically driven lasers with three GaInAs quantum wells and diameters of several...
An undercut mesa laser is fabricated on an n + -InP substrate using a single step liquid phase epita...
An undercut mesa laser is fabricated on an n + -InP substrate using a single step liquid phase epita...
A new GaInAsP/InP injection laser was fabricated on semi-insulating substrates. The structure utilis...