Add to ORKGA new type of buried heterostructure InGaAsP/InP lasers grown by a single-step liquid phase epitaxy on Cd diffused mesa substrate is described. These lasers exhibit excellent current and optical confinement. Threshold currents as low as 15 mA are achieved for a laser with a 2-µm-wide active region
Conference Digest - IEEE International Semiconductor Laser Conference157-158CDIC
A new type of strip-geometry AlGaAs double-heterostructure laser with an embedded optical waveguide ...
A InGaAsP/InP self-aligned, native oxidized buried heterostructure (BH) distributed feedback (DFB) l...
A new type of buried heterostructure InGaAsP/InP lasers grown by a single-step liquid phase epitaxy ...
Abstract-Very low threshold currents InGaAsP/InP terrace mesa (T-ME) lasers with an unpassivated sur...
Single-growth liquid-phase embedded epitaxy in the GaInAsP/InP system is described, and a new hetero...
Mode stabilized terrace InGaAsP lasers have been fabricated on semi-insulating InP substrates. The f...
Very low threshold InGaAsP terrace lasers on semi-insulating (SI) InP substrate have been fabricated...
InGaAsP/InP nanoheterostructures have been grown by liquid phase epitaxy and their structural perfec...
InGaAsP/InP nanoheterostructures have been grown by liquid phase epitaxy and their structural perfec...
Phase-locked arrays of buried-ridge InP/InGaAsP lasers, emitting at 1.3 µm, were grown by liquid pha...
Room-temperature embedded double-heterostructure injection lasers have been fabricated using selecti...
An undercut mesa laser is fabricated on an n + -InP substrate using a single step liquid phase epita...
An undercut mesa laser is fabricated on an n + -InP substrate using a single step liquid phase epita...
Very low threshold currents InGaAsP/InP terrace mesa (T-ME) lasers with an unpassivated surface have...
Conference Digest - IEEE International Semiconductor Laser Conference157-158CDIC
A new type of strip-geometry AlGaAs double-heterostructure laser with an embedded optical waveguide ...
A InGaAsP/InP self-aligned, native oxidized buried heterostructure (BH) distributed feedback (DFB) l...
A new type of buried heterostructure InGaAsP/InP lasers grown by a single-step liquid phase epitaxy ...
Abstract-Very low threshold currents InGaAsP/InP terrace mesa (T-ME) lasers with an unpassivated sur...
Single-growth liquid-phase embedded epitaxy in the GaInAsP/InP system is described, and a new hetero...
Mode stabilized terrace InGaAsP lasers have been fabricated on semi-insulating InP substrates. The f...
Very low threshold InGaAsP terrace lasers on semi-insulating (SI) InP substrate have been fabricated...
InGaAsP/InP nanoheterostructures have been grown by liquid phase epitaxy and their structural perfec...
InGaAsP/InP nanoheterostructures have been grown by liquid phase epitaxy and their structural perfec...
Phase-locked arrays of buried-ridge InP/InGaAsP lasers, emitting at 1.3 µm, were grown by liquid pha...
Room-temperature embedded double-heterostructure injection lasers have been fabricated using selecti...
An undercut mesa laser is fabricated on an n + -InP substrate using a single step liquid phase epita...
An undercut mesa laser is fabricated on an n + -InP substrate using a single step liquid phase epita...
Very low threshold currents InGaAsP/InP terrace mesa (T-ME) lasers with an unpassivated surface have...
Conference Digest - IEEE International Semiconductor Laser Conference157-158CDIC
A new type of strip-geometry AlGaAs double-heterostructure laser with an embedded optical waveguide ...
A InGaAsP/InP self-aligned, native oxidized buried heterostructure (BH) distributed feedback (DFB) l...