Add to ORKGThe high-power performance of a groove InGaAsP/InP transverse junction laser fabricated on a semi-insulating InP substrate has been investigated. Peak power of over 250 mW/facet for pulsed operation and 11 mW/facet cw are achieved with stable fundamental mode operation and narrow beam width. It is suggested that the single-mode operation is caused by a gain stabilizing mechanism related to the transverse junction injection profiles
A new GaInAsP/InP injection laser was fabricated on semi-insulating substrates. The structure utilis...
A new GaInAsP/InP injection laser was fabricated on semi-insulating substrates. The structure utilis...
High power compact laser sources are a necessity in today's technical world. While laser sources hav...
Mode stabilized terrace InGaAsP lasers have been fabricated on semi-insulating InP substrates. The f...
The concept of optical signal amplification in telecommunication networks has resulted in considerab...
Low threshold current GaInAsP/InP groove lasers have been fabricated on semi-insulating InP substrat...
Single-mode operation of the laser is a basic condition in an optical wide-band transmission link. L...
This thesis describes the design, optimization, realization and characterization of a wavelength tun...
An undercut mesa laser is fabricated on an n + -InP substrate using a single step liquid phase epita...
An undercut mesa laser is fabricated on an n + -InP substrate using a single step liquid phase epita...
This PhD thesis focuses on the study of mode locked laser diodes based on novel optimized InAs Quant...
This PhD thesis focuses on the study of mode locked laser diodes based on novel optimized InAs Quant...
The dependence of laser performance on the active region position in broad-waveguide laser diodes is...
The mode stabilization behavior of the buried active waveguide with lateral diffused junction is the...
From the explosive growth of the telecommunications industry in the past two decades, demand for hig...
A new GaInAsP/InP injection laser was fabricated on semi-insulating substrates. The structure utilis...
A new GaInAsP/InP injection laser was fabricated on semi-insulating substrates. The structure utilis...
High power compact laser sources are a necessity in today's technical world. While laser sources hav...
Mode stabilized terrace InGaAsP lasers have been fabricated on semi-insulating InP substrates. The f...
The concept of optical signal amplification in telecommunication networks has resulted in considerab...
Low threshold current GaInAsP/InP groove lasers have been fabricated on semi-insulating InP substrat...
Single-mode operation of the laser is a basic condition in an optical wide-band transmission link. L...
This thesis describes the design, optimization, realization and characterization of a wavelength tun...
An undercut mesa laser is fabricated on an n + -InP substrate using a single step liquid phase epita...
An undercut mesa laser is fabricated on an n + -InP substrate using a single step liquid phase epita...
This PhD thesis focuses on the study of mode locked laser diodes based on novel optimized InAs Quant...
This PhD thesis focuses on the study of mode locked laser diodes based on novel optimized InAs Quant...
The dependence of laser performance on the active region position in broad-waveguide laser diodes is...
The mode stabilization behavior of the buried active waveguide with lateral diffused junction is the...
From the explosive growth of the telecommunications industry in the past two decades, demand for hig...
A new GaInAsP/InP injection laser was fabricated on semi-insulating substrates. The structure utilis...
A new GaInAsP/InP injection laser was fabricated on semi-insulating substrates. The structure utilis...
High power compact laser sources are a necessity in today's technical world. While laser sources hav...