GaN系材料匹配衬底及外延膜生长机理研究

由于在数字、图象信息的显示和处理、高密度光存储、水下通信、高温大功率器件等领域的广阔应用前景，GaN系材料已经当今世界各国科技和产业界的关注热点。随着GaN在蓝光发光二极管、激光二极管不断取得进展，如何改善GaN系材料结晶完整性从而进一步提高器件的寿命和性能己逐渐成为人们最关心的问题。本文紧紧围绕如何改善GaN外延膜的结晶完整性从衬底材料和外延生长机理两个方面展开了比较系统的研究。GaN has attracted much more attention owing to its promising utilities in the digital displays and processing, high density optical data storage, underwater communication, high temperature and high power devices. With the development of GaN based blue LEDs and LDs, the demand for high-quality GaN has been becoming more and more urgent, so as to fabricate devices with longer lifetime and high performance. The improvement of the quality of GaN film was based on the vailability of lattice matched substrates and the understanding of epitaxial growth mechanism. In this work, systematic work was carried out in this view of point