High output power 40 GHz 1.55 μm passively mode-locked surface-etched distributed Bragg reflector (DBR) lasers with monolithically integrated semiconductor optical amplifiers are reported. These are based on an optimized AlGaInAs/InP epitaxial structure with a three quantum well active layer and an optical trap layer. The device produces near transform limited Gaussian pulses with a pulse duration of 3.3 ps. An average output power during mode-locked operation of 130 mW was achieved with a corresponding peak power of >1 W
Abstract The fabrication and characterisation details of novel distributed Bragg reflector (DBR) dio...
We report mode locking in lasers integrated with semiconductor optical amplifiers, using either conv...
The 10-GHz passively mode-locked AlGaInAs/InP 1.55- μm extended cavity lasers integrated with optimi...
High output power 40 GHz 1.55 μm passively mode-locked surface-etched distributed Bragg reflector (D...
High output power 40 GHz 1.55 μm passively mode-locked surface-etched distributed Bragg reflector (D...
We demonstrate a high output power passively mode-locked distributed Bragg reflector laser with inte...
High power 40 GHz 1.55 Êm passively mode-locked surface-etched DBR lasers monolithically integr...
We report 40 GHz passively mode-locked 1.55 μm AlGaInAs/InP lasers with integrated semiconductor opt...
We have fabricated 40-GHz passively mode-locked AlGaInAs-InP 1.55-mu m lasers integrated with surfac...
We fabricated 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm lasers integrated with surface-etche...
We fabricated 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm lasers integrated with surface-etche...
We report 40 GHz passively mode-locked 1.55 μm AlGaInAs/InP lasers with integrated tapered semicondu...
The 45-GHz passively mode-locked AlGaInAs-InP 1.55-mu m lasers integrated with surface-etched distri...
The state-of-the-art of the development and fabrication of advanced 1.55- micrometer/40-GHz pulse la...
The monolithic integration of four 10-GHz 1.55-mu m AlGaInAs/InP mode-locked surface-etched distribu...
Abstract The fabrication and characterisation details of novel distributed Bragg reflector (DBR) dio...
We report mode locking in lasers integrated with semiconductor optical amplifiers, using either conv...
The 10-GHz passively mode-locked AlGaInAs/InP 1.55- μm extended cavity lasers integrated with optimi...
High output power 40 GHz 1.55 μm passively mode-locked surface-etched distributed Bragg reflector (D...
High output power 40 GHz 1.55 μm passively mode-locked surface-etched distributed Bragg reflector (D...
We demonstrate a high output power passively mode-locked distributed Bragg reflector laser with inte...
High power 40 GHz 1.55 Êm passively mode-locked surface-etched DBR lasers monolithically integr...
We report 40 GHz passively mode-locked 1.55 μm AlGaInAs/InP lasers with integrated semiconductor opt...
We have fabricated 40-GHz passively mode-locked AlGaInAs-InP 1.55-mu m lasers integrated with surfac...
We fabricated 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm lasers integrated with surface-etche...
We fabricated 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm lasers integrated with surface-etche...
We report 40 GHz passively mode-locked 1.55 μm AlGaInAs/InP lasers with integrated tapered semicondu...
The 45-GHz passively mode-locked AlGaInAs-InP 1.55-mu m lasers integrated with surface-etched distri...
The state-of-the-art of the development and fabrication of advanced 1.55- micrometer/40-GHz pulse la...
The monolithic integration of four 10-GHz 1.55-mu m AlGaInAs/InP mode-locked surface-etched distribu...
Abstract The fabrication and characterisation details of novel distributed Bragg reflector (DBR) dio...
We report mode locking in lasers integrated with semiconductor optical amplifiers, using either conv...
The 10-GHz passively mode-locked AlGaInAs/InP 1.55- μm extended cavity lasers integrated with optimi...