We report 40 GHz passively mode-locked 1.55 μm AlGaInAs/InP lasers with integrated tapered semiconductor optical amplifiers producing nearly transform limited pulses with a pulse width of 4.3 ps and average output power of 200 mW. © 2012 OSA
We report mode locking in lasers integrated with semiconductor optical amplifiers, using either conv...
High repetition rate, picosecond laser sources are key elements for WDM/OTDM transmission, switching...
Passively modelocked linear lasers have been fabricated using bulk InGaAsP/InP material. Modelocking...
We report 40 GHz passively mode-locked 1.55 μm AlGaInAs/InP lasers with integrated tapered semicondu...
We report 40 GHz passively mode-locked 1.55 μm AlGaInAs/InP lasers with integrated semiconductor opt...
High output power 40 GHz 1.55 μm passively mode-locked surface-etched distributed Bragg reflector (D...
High output power 40 GHz 1.55 μm passively mode-locked surface-etched distributed Bragg reflector (D...
High power 40 GHz 1.55 Êm passively mode-locked surface-etched DBR lasers monolithically integr...
We demonstrate a high output power passively mode-locked distributed Bragg reflector laser with inte...
We fabricated 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm lasers integrated with surface-etche...
We fabricated 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm lasers integrated with surface-etche...
A novel 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm laser was demonstrated with low diver...
We have fabricated 40-GHz passively mode-locked AlGaInAs-InP 1.55-mu m lasers integrated with surfac...
The state-of-the-art of the development and fabrication of advanced 1.55- micrometer/40-GHz pulse la...
Passively modelocked linear lasers have been fabricated using bulk InGaAsP/InP material. Modelocking...
We report mode locking in lasers integrated with semiconductor optical amplifiers, using either conv...
High repetition rate, picosecond laser sources are key elements for WDM/OTDM transmission, switching...
Passively modelocked linear lasers have been fabricated using bulk InGaAsP/InP material. Modelocking...
We report 40 GHz passively mode-locked 1.55 μm AlGaInAs/InP lasers with integrated tapered semicondu...
We report 40 GHz passively mode-locked 1.55 μm AlGaInAs/InP lasers with integrated semiconductor opt...
High output power 40 GHz 1.55 μm passively mode-locked surface-etched distributed Bragg reflector (D...
High output power 40 GHz 1.55 μm passively mode-locked surface-etched distributed Bragg reflector (D...
High power 40 GHz 1.55 Êm passively mode-locked surface-etched DBR lasers monolithically integr...
We demonstrate a high output power passively mode-locked distributed Bragg reflector laser with inte...
We fabricated 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm lasers integrated with surface-etche...
We fabricated 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm lasers integrated with surface-etche...
A novel 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm laser was demonstrated with low diver...
We have fabricated 40-GHz passively mode-locked AlGaInAs-InP 1.55-mu m lasers integrated with surfac...
The state-of-the-art of the development and fabrication of advanced 1.55- micrometer/40-GHz pulse la...
Passively modelocked linear lasers have been fabricated using bulk InGaAsP/InP material. Modelocking...
We report mode locking in lasers integrated with semiconductor optical amplifiers, using either conv...
High repetition rate, picosecond laser sources are key elements for WDM/OTDM transmission, switching...
Passively modelocked linear lasers have been fabricated using bulk InGaAsP/InP material. Modelocking...