Monolithic 40-GHz passively mode-locked AlGaInAs-InP 1.55-mu m MQW laser with surface-etched distributed Bragg reflector

Hou, L.
Dylewicz, R.
Haji, M.
Stolarz, P.
Qiu, B.
Bryce, A.C.

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Publication date

October 2010

DOI

10.1109/LPT.2010.2064764

Publisher

Institute of Electrical and Electronics Engineers

Abstract

We have fabricated 40-GHz passively mode-locked AlGaInAs-InP 1.55-mu m lasers integrated with surface-etched distributed Bragg mirrors. Numerically optimized gratings provide low-scattering losses and accurate wavelength control. The lasers produce 4.46-ps Gaussian pulses with time-bandwidth product of 0.47

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Monolithic 40-GHz passively mode-locked AlGaInAs-InP 1.55-mu m MQW laser with surface-etched distributed Bragg reflector

Abstract

Extracted data

Monolithic 40-GHz passively mode-locked AlGaInAs-InP 1.55-mu m MQW laser with surface-etched distributed Bragg reflector

Abstract

Extracted data

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