The 10-GHz passively mode-locked AlGaInAs/InP 1.55- μm extended cavity lasers integrated with optimized surface-etched distributed Bragg mirrors have been fabricated. A quantum-well intermixing process was used to provide low-absorption loss gratings with accurate wavelength control. The lasers produce 2.99-ps sech<sup>2</sup>-pulses with a time-bandwidth product (TBP) of 0.51
We report the use of a laser irradiation process, which combines irradiation by continuous wave and ...
Abstract: We report electrical and optical injection locking of an InP colliding pulse mode locked l...
The first demonstration of harmonic mode-locked operation from a monolithic semiconductor laser comp...
The 45-GHz passively mode-locked AlGaInAs-InP 1.55-mu m lasers integrated with surface-etched distri...
We fabricated 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm lasers integrated with surface-etche...
We fabricated 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm lasers integrated with surface-etche...
We have fabricated 40-GHz passively mode-locked AlGaInAs-InP 1.55-mu m lasers integrated with surfac...
High output power 40 GHz 1.55 μm passively mode-locked surface-etched distributed Bragg reflector (D...
High output power 40 GHz 1.55 μm passively mode-locked surface-etched distributed Bragg reflector (D...
The monolithic integration of four 10-GHz 1.55-mu m AlGaInAs/InP mode-locked surface-etched distribu...
A mode-locked extended cavity quantum well ring laser at 1.58 μm with a repetition rate of 2.5 GHz i...
Monolithic mode-locked semiconductor lasers are attractive sources of short optical pulses with adva...
AbstractThe passive sections of a monolithic device must have a wider bandgap than the active region...
High power 40 GHz 1.55 Êm passively mode-locked surface-etched DBR lasers monolithically integr...
A passively mode locked extended cavity quantum well ring laser at 1.58 µm with repetition rate of 2...
We report the use of a laser irradiation process, which combines irradiation by continuous wave and ...
Abstract: We report electrical and optical injection locking of an InP colliding pulse mode locked l...
The first demonstration of harmonic mode-locked operation from a monolithic semiconductor laser comp...
The 45-GHz passively mode-locked AlGaInAs-InP 1.55-mu m lasers integrated with surface-etched distri...
We fabricated 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm lasers integrated with surface-etche...
We fabricated 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm lasers integrated with surface-etche...
We have fabricated 40-GHz passively mode-locked AlGaInAs-InP 1.55-mu m lasers integrated with surfac...
High output power 40 GHz 1.55 μm passively mode-locked surface-etched distributed Bragg reflector (D...
High output power 40 GHz 1.55 μm passively mode-locked surface-etched distributed Bragg reflector (D...
The monolithic integration of four 10-GHz 1.55-mu m AlGaInAs/InP mode-locked surface-etched distribu...
A mode-locked extended cavity quantum well ring laser at 1.58 μm with a repetition rate of 2.5 GHz i...
Monolithic mode-locked semiconductor lasers are attractive sources of short optical pulses with adva...
AbstractThe passive sections of a monolithic device must have a wider bandgap than the active region...
High power 40 GHz 1.55 Êm passively mode-locked surface-etched DBR lasers monolithically integr...
A passively mode locked extended cavity quantum well ring laser at 1.58 µm with repetition rate of 2...
We report the use of a laser irradiation process, which combines irradiation by continuous wave and ...
Abstract: We report electrical and optical injection locking of an InP colliding pulse mode locked l...
The first demonstration of harmonic mode-locked operation from a monolithic semiconductor laser comp...