The state-of-the-art of the development and fabrication of advanced 1.55- micrometer/40-GHz pulse laser modules with a monolithic InP-based mode- locked distributed Bragg reflector (DBR) MQW laser chip inside is reported, with respect to the future applications in high-speed optical communications. We emphasize the latest improvements for hybrid mode- locked devices, which integrate a saturable absorber or an electroabsorption modulator. We further illustrate different technical approaches that enable meeting predetermined frequencies and wavelengths, and which are at the same time promising with respect to high fabrication yields
We report 40 GHz passively mode-locked 1.55 μm AlGaInAs/InP lasers with integrated semiconductor opt...
In this paper an overview is presented of results obtained with mode-locked semiconductor laser syst...
The monolithic integration of four 10-GHz 1.55-mu m AlGaInAs/InP mode-locked surface-etched distribu...
High output power 40 GHz 1.55 μm passively mode-locked surface-etched distributed Bragg reflector (D...
High output power 40 GHz 1.55 μm passively mode-locked surface-etched distributed Bragg reflector (D...
Mode-locked laser OEICs on GaInAsP/InP for 160 Gb/s application in hybrid mode-locking operation are...
High power 40 GHz 1.55 Êm passively mode-locked surface-etched DBR lasers monolithically integr...
Abstract: A 1-GHz hybrid mode-locked monolithic semiconductor laser on an InP platform is demonstrat...
The 45-GHz passively mode-locked AlGaInAs-InP 1.55-mu m lasers integrated with surface-etched distri...
We describe mode locked laser diodes (MLLDs) operating from 40 GHz to >1 THz. Below 40 GHz, opera...
We have fabricated 40-GHz passively mode-locked AlGaInAs-InP 1.55-mu m lasers integrated with surfac...
The monolithic integration of four 40 GHz multi-colored mode-locked lasers with a 4×1 MMI, four elec...
We fabricated 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm lasers integrated with surface-etche...
We fabricated 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm lasers integrated with surface-etche...
Abstract: We report electrical and optical injection locking of an InP colliding pulse mode locked l...
We report 40 GHz passively mode-locked 1.55 μm AlGaInAs/InP lasers with integrated semiconductor opt...
In this paper an overview is presented of results obtained with mode-locked semiconductor laser syst...
The monolithic integration of four 10-GHz 1.55-mu m AlGaInAs/InP mode-locked surface-etched distribu...
High output power 40 GHz 1.55 μm passively mode-locked surface-etched distributed Bragg reflector (D...
High output power 40 GHz 1.55 μm passively mode-locked surface-etched distributed Bragg reflector (D...
Mode-locked laser OEICs on GaInAsP/InP for 160 Gb/s application in hybrid mode-locking operation are...
High power 40 GHz 1.55 Êm passively mode-locked surface-etched DBR lasers monolithically integr...
Abstract: A 1-GHz hybrid mode-locked monolithic semiconductor laser on an InP platform is demonstrat...
The 45-GHz passively mode-locked AlGaInAs-InP 1.55-mu m lasers integrated with surface-etched distri...
We describe mode locked laser diodes (MLLDs) operating from 40 GHz to >1 THz. Below 40 GHz, opera...
We have fabricated 40-GHz passively mode-locked AlGaInAs-InP 1.55-mu m lasers integrated with surfac...
The monolithic integration of four 40 GHz multi-colored mode-locked lasers with a 4×1 MMI, four elec...
We fabricated 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm lasers integrated with surface-etche...
We fabricated 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm lasers integrated with surface-etche...
Abstract: We report electrical and optical injection locking of an InP colliding pulse mode locked l...
We report 40 GHz passively mode-locked 1.55 μm AlGaInAs/InP lasers with integrated semiconductor opt...
In this paper an overview is presented of results obtained with mode-locked semiconductor laser syst...
The monolithic integration of four 10-GHz 1.55-mu m AlGaInAs/InP mode-locked surface-etched distribu...