We report 40 GHz passively mode-locked 1.55 μm AlGaInAs/InP lasers with integrated semiconductor optical amplifiers producing nearly transform limited pulses with a pulse width of 4 ps and a peak power over 550 mW
Abstract — Mode-locked lasers operating at 1.5 microns are described, in particular the evolution in...
Abstract—We present two different diode-pumped passively mode-locked Nd:YVO 4 lasers with a repetiti...
Mode-locked lasers operating at 1.5 microns are described, in particular the evolution in the laser ...
We report 40 GHz passively mode-locked 1.55 μm AlGaInAs/InP lasers with integrated semiconductor opt...
We report 40 GHz passively mode-locked 1.55 μm AlGaInAs/InP lasers with integrated tapered semicondu...
High output power 40 GHz 1.55 μm passively mode-locked surface-etched distributed Bragg reflector (D...
High output power 40 GHz 1.55 μm passively mode-locked surface-etched distributed Bragg reflector (D...
High power 40 GHz 1.55 Êm passively mode-locked surface-etched DBR lasers monolithically integr...
We demonstrate a high output power passively mode-locked distributed Bragg reflector laser with inte...
We fabricated 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm lasers integrated with surface-etche...
The state-of-the-art of the development and fabrication of advanced 1.55- micrometer/40-GHz pulse la...
We fabricated 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm lasers integrated with surface-etche...
A novel 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm laser was demonstrated with low diver...
We report mode locking in lasers integrated with semiconductor optical amplifiers, using either conv...
Abstract—We have developed optically pumped passively mode-locked vertical-external-cavity surface-e...
Abstract — Mode-locked lasers operating at 1.5 microns are described, in particular the evolution in...
Abstract—We present two different diode-pumped passively mode-locked Nd:YVO 4 lasers with a repetiti...
Mode-locked lasers operating at 1.5 microns are described, in particular the evolution in the laser ...
We report 40 GHz passively mode-locked 1.55 μm AlGaInAs/InP lasers with integrated semiconductor opt...
We report 40 GHz passively mode-locked 1.55 μm AlGaInAs/InP lasers with integrated tapered semicondu...
High output power 40 GHz 1.55 μm passively mode-locked surface-etched distributed Bragg reflector (D...
High output power 40 GHz 1.55 μm passively mode-locked surface-etched distributed Bragg reflector (D...
High power 40 GHz 1.55 Êm passively mode-locked surface-etched DBR lasers monolithically integr...
We demonstrate a high output power passively mode-locked distributed Bragg reflector laser with inte...
We fabricated 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm lasers integrated with surface-etche...
The state-of-the-art of the development and fabrication of advanced 1.55- micrometer/40-GHz pulse la...
We fabricated 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm lasers integrated with surface-etche...
A novel 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm laser was demonstrated with low diver...
We report mode locking in lasers integrated with semiconductor optical amplifiers, using either conv...
Abstract—We have developed optically pumped passively mode-locked vertical-external-cavity surface-e...
Abstract — Mode-locked lasers operating at 1.5 microns are described, in particular the evolution in...
Abstract—We present two different diode-pumped passively mode-locked Nd:YVO 4 lasers with a repetiti...
Mode-locked lasers operating at 1.5 microns are described, in particular the evolution in the laser ...