Add to ORKGAbstract — Mode-locked lasers operating at 1.5 microns are described, in particular the evolution in the laser design as the mode-locked frequency is increased from ~10 GHz to 1.4 THz. Novel DBR constructions and nonlinear conversion are required to reach the highest frequencies. Keywords—Semiconductor laser; mode-locking; integrated optics; THz generation; DBR laser I
Abstract—We have developed optically pumped passively mode-locked vertical-external-cavity surface-e...
We report 40 GHz passively mode-locked 1.55 μm AlGaInAs/InP lasers with integrated semiconductor opt...
In this paper we present some characterizations of passively mode-locked semiconductor lasers. These...
Mode-locked lasers operating at 1.5 microns are described, in particular the evolution in the laser ...
We report mode locking in lasers integrated with semiconductor optical amplifiers, using either conv...
Progress in technology, theory and applications of high-frequency mode-locked diode lasers is review...
We report a laser with two different SGDBRs that mode-lock at 640 and 700 GHz repetition rates, resp...
We present our work on the realization of integrated III/V-on-silicon integrated mode-locked lasers....
The chapter reviews the recent advances and the state of the art in the area of mode-locked semicond...
We present a novel laser mode-locking scheme and discuss its unusual properties and feasibility usin...
Abstract—Fourier-domain (FD) mode locking of integrated laser diode structures is studied theoretica...
Mode-locked lasers have numerous applications in the areas of communications, spectroscopy, and freq...
We present harmonic modelocked operation of a novel design of monolithic compound-cavity semiconduct...
Progress in coherent receiver development at terahertz frequencies has been hindered by the lack of ...
We present a highly reproducible method of producing terahertz (THz) optical pulses using a class of...
Abstract—We have developed optically pumped passively mode-locked vertical-external-cavity surface-e...
We report 40 GHz passively mode-locked 1.55 μm AlGaInAs/InP lasers with integrated semiconductor opt...
In this paper we present some characterizations of passively mode-locked semiconductor lasers. These...
Mode-locked lasers operating at 1.5 microns are described, in particular the evolution in the laser ...
We report mode locking in lasers integrated with semiconductor optical amplifiers, using either conv...
Progress in technology, theory and applications of high-frequency mode-locked diode lasers is review...
We report a laser with two different SGDBRs that mode-lock at 640 and 700 GHz repetition rates, resp...
We present our work on the realization of integrated III/V-on-silicon integrated mode-locked lasers....
The chapter reviews the recent advances and the state of the art in the area of mode-locked semicond...
We present a novel laser mode-locking scheme and discuss its unusual properties and feasibility usin...
Abstract—Fourier-domain (FD) mode locking of integrated laser diode structures is studied theoretica...
Mode-locked lasers have numerous applications in the areas of communications, spectroscopy, and freq...
We present harmonic modelocked operation of a novel design of monolithic compound-cavity semiconduct...
Progress in coherent receiver development at terahertz frequencies has been hindered by the lack of ...
We present a highly reproducible method of producing terahertz (THz) optical pulses using a class of...
Abstract—We have developed optically pumped passively mode-locked vertical-external-cavity surface-e...
We report 40 GHz passively mode-locked 1.55 μm AlGaInAs/InP lasers with integrated semiconductor opt...
In this paper we present some characterizations of passively mode-locked semiconductor lasers. These...