An overview of Cree’s Title III production-capacity program for GaN-on-SiC MMIC on 100-mm-diameter substrates is presented. This program is focused on Manufacturing Readiness Assessments (MRA) of key metrics including reliability (T50 and T1) yield, cost, and cycle time. The final program requirement is a Manufacturing Readiness Level (MRL) of eight (8) or higher. I
GaN is a breakthrough material offering huge enhancements in power amplifier performance. Favourable...
Utilizing Al2O3 as a gate dielectric, Raytheon has developed a state of the art 0.25µm GaN MISHEMT t...
Manga is a five Nation (Germany, France, Italy, Sweden and United Kingdom) joint project realized by...
TriQuint is in the third year of a Defense Production Act Title III contract to improve GaN manufact...
Wide bandgap (WBG) devices offer significant advantages for next generation military and commercial ...
Manga (Manufacturable GaN: SiC substrates and GaN epi wafers supply chain) is a five nations (German...
In recent years, the Defense Production Act Title III program has invested in several projects to in...
A generic microstrip MMIC process targeted for SiC and GaN technology has been developed. Passive co...
This paper describes the qualification of the 50 V, 0.5 m GaN on SiC process that has been released ...
Abstract — A 0.25-µm, production III-Nitride-based high-electron mobility transistor (HEMT) technolo...
A generic microstrip MMIC process targeted for SiC and GaN technology has beendeveloped. Passive com...
We report on epitaxial growth, processing, device performance and reliability of our GaN HEMT and MM...
DARPA perspectives are probably anxiously awaited by those having to make the grade and eagerly anti...
We report on epitaxial growth, processing, device performance and reliability of our GaN HEMT and MM...
Significant progress has been made in the development of SiC MESFETs and MMIC power amplifiers manuf...
GaN is a breakthrough material offering huge enhancements in power amplifier performance. Favourable...
Utilizing Al2O3 as a gate dielectric, Raytheon has developed a state of the art 0.25µm GaN MISHEMT t...
Manga is a five Nation (Germany, France, Italy, Sweden and United Kingdom) joint project realized by...
TriQuint is in the third year of a Defense Production Act Title III contract to improve GaN manufact...
Wide bandgap (WBG) devices offer significant advantages for next generation military and commercial ...
Manga (Manufacturable GaN: SiC substrates and GaN epi wafers supply chain) is a five nations (German...
In recent years, the Defense Production Act Title III program has invested in several projects to in...
A generic microstrip MMIC process targeted for SiC and GaN technology has been developed. Passive co...
This paper describes the qualification of the 50 V, 0.5 m GaN on SiC process that has been released ...
Abstract — A 0.25-µm, production III-Nitride-based high-electron mobility transistor (HEMT) technolo...
A generic microstrip MMIC process targeted for SiC and GaN technology has beendeveloped. Passive com...
We report on epitaxial growth, processing, device performance and reliability of our GaN HEMT and MM...
DARPA perspectives are probably anxiously awaited by those having to make the grade and eagerly anti...
We report on epitaxial growth, processing, device performance and reliability of our GaN HEMT and MM...
Significant progress has been made in the development of SiC MESFETs and MMIC power amplifiers manuf...
GaN is a breakthrough material offering huge enhancements in power amplifier performance. Favourable...
Utilizing Al2O3 as a gate dielectric, Raytheon has developed a state of the art 0.25µm GaN MISHEMT t...
Manga is a five Nation (Germany, France, Italy, Sweden and United Kingdom) joint project realized by...