Achieve Manufacturing Readiness Level 8 of high-power, high efficiency 0.25m GaN on SiC HEMT Process

TriQuint is in the third year of a Defense Production Act Title III contract to improve GaN manufacturing capability and establish a domestic, economically viable, open-foundry merchant supplier production capability for S-band and wideband MMICs employing GaN epitaxy on 100mm SiC substrates. TriQuint has achieved more than 1E6 hours MTTF at 200◦C channel temperature on production GaN on SiC technology. In Title III program, through improvements in GaN characterization, process variability reduction, and cycle time reduction, TriQuint is working to complete the program with a final manufacturing readiness level assessment of 8. This paper discuss the methodology utilized and observations made during the program