Manga is a five Nation (Germany, France, Italy, Sweden and United Kingdom) joint project realized by the European Defence Agency (EDA) which focuses on SiC substrates and a GaN epi wafers supply chain. The main objective of the project, started in March 2010, is to sustain the industrial development of semi-insulating silicon carbide substrates (SI SiC) and prove the industrial capability of Europe to deliver GaN HEMT and MMIC foundries with state-of-the-art GaN HEMT epitaxial wafers on SI-SiC substrates. This paper gives an overview on the current status of the technical developments achieved within the project
Wide bandgap (WBG) devices offer significant advantages for next generation military and commercial ...
Ontwikkeling van GaN/SiC componenten met het oog op vermogentoepassin gen Het belangrijkste halfgel...
This paper reports on low-pressure metalorganic vapour deposition (LP-MOCVD) growth optimisation of ...
Manga is a five Nation (Germany, France, Italy, Sweden and United Kingdom) joint project realized by...
Manga (Manufacturable GaN: SiC substrates and GaN epi wafers supply chain) is a five nations (German...
We report on a systematic comparison of semiinsulating SiC substrates from Cree and SiCrystal on sub...
We report on a systematic comparison of semi-insulating SiC substrates from Cree and SiCrystal on su...
AbstractThe developing list of wide gap substrates for device production is remarkable compared with...
GaN-on-SiC HEMTs have gained remarkable attention due to their potential to revolutionize power and ...
SiCOI (SiC On Insulator) composite substrates obtained by the Smart-Cut TM process are alternative...
SiCOI (SiC On Insulator) composite substrates obtained by the Smart-Cut TM process are alternative...
GaN-on-SiC HEMTs have gained remarkable attention due to their potential to revolutionize power and ...
The depth of Euronitride research continues to unfold as more results become available and, judging ...
We report on recent results from our GaN transistor and circuit technology. Epitaxial growth is perf...
The depth of Euronitride research continues to unfold as more results become available and, judging ...
Wide bandgap (WBG) devices offer significant advantages for next generation military and commercial ...
Ontwikkeling van GaN/SiC componenten met het oog op vermogentoepassin gen Het belangrijkste halfgel...
This paper reports on low-pressure metalorganic vapour deposition (LP-MOCVD) growth optimisation of ...
Manga is a five Nation (Germany, France, Italy, Sweden and United Kingdom) joint project realized by...
Manga (Manufacturable GaN: SiC substrates and GaN epi wafers supply chain) is a five nations (German...
We report on a systematic comparison of semiinsulating SiC substrates from Cree and SiCrystal on sub...
We report on a systematic comparison of semi-insulating SiC substrates from Cree and SiCrystal on su...
AbstractThe developing list of wide gap substrates for device production is remarkable compared with...
GaN-on-SiC HEMTs have gained remarkable attention due to their potential to revolutionize power and ...
SiCOI (SiC On Insulator) composite substrates obtained by the Smart-Cut TM process are alternative...
SiCOI (SiC On Insulator) composite substrates obtained by the Smart-Cut TM process are alternative...
GaN-on-SiC HEMTs have gained remarkable attention due to their potential to revolutionize power and ...
The depth of Euronitride research continues to unfold as more results become available and, judging ...
We report on recent results from our GaN transistor and circuit technology. Epitaxial growth is perf...
The depth of Euronitride research continues to unfold as more results become available and, judging ...
Wide bandgap (WBG) devices offer significant advantages for next generation military and commercial ...
Ontwikkeling van GaN/SiC componenten met het oog op vermogentoepassin gen Het belangrijkste halfgel...
This paper reports on low-pressure metalorganic vapour deposition (LP-MOCVD) growth optimisation of ...