Manga (Manufacturable GaN: SiC substrates and GaN epi wafers supply chain) is a five nations (Germany, France, Italy, Sweden and the United Kingdom) program performed under the umbrella of the European Defense Agency (EDA). As a main aim the European capacity for an industrial production of high quality 100-mm semi-insulating SiC substrates has been shown. The achieved quality of the material has been validated by the GaN HEMT and MMIC foundry partners within the program. Results regarding transistor performance, reliability and the status of industrialization achieved in the Manga program are described. In addition, substantial progress has been made in the growing and processing of advanced InAlNbased HEMT structures for high-frequency ap...
GaN-based microwave power amplifiers have been identified as critical components in Sandia's next ge...
An overview of Cree’s Title III production-capacity program for GaN-on-SiC MMIC on 100-mm-diameter s...
We report on epitaxial growth, processing, device performance and reliability of our GaN HEMT and MM...
Manga is a five Nation (Germany, France, Italy, Sweden and United Kingdom) joint project realized by...
Manga is a five Nation (Germany, France, Italy, Sweden and United Kingdom) joint project realized by...
We report on a systematic comparison of semi-insulating SiC substrates from Cree and SiCrystal on su...
We report on a systematic comparison of semiinsulating SiC substrates from Cree and SiCrystal on sub...
We present an overview on epitaxial growth, processing technology, device performance, and reliabili...
SiCOI (SiC On Insulator) composite substrates obtained by the Smart-Cut TM process are alternative...
SiCOI (SiC On Insulator) composite substrates obtained by the Smart-Cut TM process are alternative...
Wide bandgap (WBG) devices offer significant advantages for next generation military and commercial ...
AbstractThe developing list of wide gap substrates for device production is remarkable compared with...
TriQuint is in the third year of a Defense Production Act Title III contract to improve GaN manufact...
Abstract — A 0.25-µm, production III-Nitride-based high-electron mobility transistor (HEMT) technolo...
We report on recent results from our GaN transistor and circuit technology. Epitaxial growth is perf...
GaN-based microwave power amplifiers have been identified as critical components in Sandia's next ge...
An overview of Cree’s Title III production-capacity program for GaN-on-SiC MMIC on 100-mm-diameter s...
We report on epitaxial growth, processing, device performance and reliability of our GaN HEMT and MM...
Manga is a five Nation (Germany, France, Italy, Sweden and United Kingdom) joint project realized by...
Manga is a five Nation (Germany, France, Italy, Sweden and United Kingdom) joint project realized by...
We report on a systematic comparison of semi-insulating SiC substrates from Cree and SiCrystal on su...
We report on a systematic comparison of semiinsulating SiC substrates from Cree and SiCrystal on sub...
We present an overview on epitaxial growth, processing technology, device performance, and reliabili...
SiCOI (SiC On Insulator) composite substrates obtained by the Smart-Cut TM process are alternative...
SiCOI (SiC On Insulator) composite substrates obtained by the Smart-Cut TM process are alternative...
Wide bandgap (WBG) devices offer significant advantages for next generation military and commercial ...
AbstractThe developing list of wide gap substrates for device production is remarkable compared with...
TriQuint is in the third year of a Defense Production Act Title III contract to improve GaN manufact...
Abstract — A 0.25-µm, production III-Nitride-based high-electron mobility transistor (HEMT) technolo...
We report on recent results from our GaN transistor and circuit technology. Epitaxial growth is perf...
GaN-based microwave power amplifiers have been identified as critical components in Sandia's next ge...
An overview of Cree’s Title III production-capacity program for GaN-on-SiC MMIC on 100-mm-diameter s...
We report on epitaxial growth, processing, device performance and reliability of our GaN HEMT and MM...