Add to ORKGA generic microstrip MMIC process targeted for SiC and GaN technology has been developed. Passive components for high power operation were developed and verified. Circuit models for both passive and active components have been formulated. Using the developed MMIC process an amplifier and a limiter have been manufactured
Wide bandgap technology for microwave electronics has been an intense area of research during the la...
AIGaN/GaN-based HEMT MMICs on s.i. SiC wafer substrates are designed and realized for linear broadba...
Commercial RF MMIC fabrication process technologies were investigated for fabrication of integrated ...
A generic microstrip MMIC process targeted for SiC and GaN technology has beendeveloped. Passive com...
A monolithic microwave integrated circuit (MMIC)process based on an in-house SiC MESFET technology h...
A monolithic microwave integrated circuit (MMIC)process based on an in-house SiC MESFET technology h...
A SiC MESFET based MMIC process has been successfully developed. This technology has its main potent...
A SiC MESFET based MMIC process has been successfully developed. This technology has its main potent...
Significant progress has been made in the development of SiC MESFETs and MMIC power amplifiers manuf...
Wide bandgap (WBG) devices offer significant advantages for next generation military and commercial ...
A MMIC process in AlGaN/GaN technology for advanced transceiver design has been developed. The proce...
An overview of Cree’s Title III production-capacity program for GaN-on-SiC MMIC on 100-mm-diameter s...
Silicon carbide (SiC) semiconductor devices for high power applications are now commercially availab...
Silicon carbide (SiC) semiconductor devices for high power applications are now commercially availab...
<p>Wide bandgap technology for microwave electronics has been an intense area of research during the...
Wide bandgap technology for microwave electronics has been an intense area of research during the la...
AIGaN/GaN-based HEMT MMICs on s.i. SiC wafer substrates are designed and realized for linear broadba...
Commercial RF MMIC fabrication process technologies were investigated for fabrication of integrated ...
A generic microstrip MMIC process targeted for SiC and GaN technology has beendeveloped. Passive com...
A monolithic microwave integrated circuit (MMIC)process based on an in-house SiC MESFET technology h...
A monolithic microwave integrated circuit (MMIC)process based on an in-house SiC MESFET technology h...
A SiC MESFET based MMIC process has been successfully developed. This technology has its main potent...
A SiC MESFET based MMIC process has been successfully developed. This technology has its main potent...
Significant progress has been made in the development of SiC MESFETs and MMIC power amplifiers manuf...
Wide bandgap (WBG) devices offer significant advantages for next generation military and commercial ...
A MMIC process in AlGaN/GaN technology for advanced transceiver design has been developed. The proce...
An overview of Cree’s Title III production-capacity program for GaN-on-SiC MMIC on 100-mm-diameter s...
Silicon carbide (SiC) semiconductor devices for high power applications are now commercially availab...
Silicon carbide (SiC) semiconductor devices for high power applications are now commercially availab...
<p>Wide bandgap technology for microwave electronics has been an intense area of research during the...
Wide bandgap technology for microwave electronics has been an intense area of research during the la...
AIGaN/GaN-based HEMT MMICs on s.i. SiC wafer substrates are designed and realized for linear broadba...
Commercial RF MMIC fabrication process technologies were investigated for fabrication of integrated ...