Add to ORKGThe main objective of this thesis is to create an accurate, reliable yet simple noise model that could model the noise features of InP HBTs.Doctor of Philosophy (EEE
The high-frequency behavior of electronic devices is of major interest in the field of research and ...
A novel transit time based analytical broadband noise model is developed and implemented for high fr...
Le développement des technologies de communication et de l’information nécessite des composants semi...
DC, RF and noise characteristics of advanced InP/InGaAs and Si/SiGe heterojunction bipolar transisto...
DC, RF and noise characteristics of advanced InP/InGaAs and Si/SiGe heterojunction bipolar transisto...
High frequency (h.f.) noise characteristics of advanced InP and GaAs HBTs were measured and simulate...
High frequency (h.f.) noise characteristics of advanced InP and GaAs HBTs were measured and simulate...
This thesis studies: (i) the noise properties of AlGaAs/GaAs Heterojunction Bipolar Transistors (HBT...
International audienceInvited paper The modeling of microwave transistors in the field of RF and Mic...
International audienceInvited paper The modeling of microwave transistors in the field of RF and Mic...
The main objectives of this thesis are to develop the fabrication technology for InP/InGaAs Heteroju...
The main objectives of this thesis are to develop the fabrication technology for InP/InGaAs Heteroju...
-The noise figure of the heterojunction bipolar transistor (HBT) in the microwave frequency range is...
-The noise figure of the heterojunction bipolar transistor (HBT) in the microwave frequency range is...
The noise figure of the heterojunction bipolar transistor (HBT) in the microwave frequency range is ...
The high-frequency behavior of electronic devices is of major interest in the field of research and ...
A novel transit time based analytical broadband noise model is developed and implemented for high fr...
Le développement des technologies de communication et de l’information nécessite des composants semi...
DC, RF and noise characteristics of advanced InP/InGaAs and Si/SiGe heterojunction bipolar transisto...
DC, RF and noise characteristics of advanced InP/InGaAs and Si/SiGe heterojunction bipolar transisto...
High frequency (h.f.) noise characteristics of advanced InP and GaAs HBTs were measured and simulate...
High frequency (h.f.) noise characteristics of advanced InP and GaAs HBTs were measured and simulate...
This thesis studies: (i) the noise properties of AlGaAs/GaAs Heterojunction Bipolar Transistors (HBT...
International audienceInvited paper The modeling of microwave transistors in the field of RF and Mic...
International audienceInvited paper The modeling of microwave transistors in the field of RF and Mic...
The main objectives of this thesis are to develop the fabrication technology for InP/InGaAs Heteroju...
The main objectives of this thesis are to develop the fabrication technology for InP/InGaAs Heteroju...
-The noise figure of the heterojunction bipolar transistor (HBT) in the microwave frequency range is...
-The noise figure of the heterojunction bipolar transistor (HBT) in the microwave frequency range is...
The noise figure of the heterojunction bipolar transistor (HBT) in the microwave frequency range is ...
The high-frequency behavior of electronic devices is of major interest in the field of research and ...
A novel transit time based analytical broadband noise model is developed and implemented for high fr...
Le développement des technologies de communication et de l’information nécessite des composants semi...