Add to ORKGThe main objectives of this thesis are to develop the fabrication technology for InP/InGaAs Heterojunction Bipolar Transistors (HBTs) and conduct comprehensive studies on the dc and microwave characteristics of the HBTs. The developed HBT technology is also intended to demonstrate its suitability for Monolithic Microwave Integrated Circuit applications.Doctor of Philosophy (EEE
The theoretical predictions for the performance of Heterojunction Bipolar Transistors (HBTs) have be...
The theoretical predictions for the performance of Heterojunction Bipolar Transistors (HBTs) have be...
The prevalence of mobile computing devices and emerging demand for high data rate communication have...
The main objectives of this thesis are to develop the fabrication technology for InP/InGaAs Heteroju...
The main objective of this work is to develop a baseline fabrication technology for GaAs-based Heter...
The main objective of this work is to develop a baseline fabrication technology for GaAs-based Heter...
117 p.In this work, high performance GaAs-based power HBT technology is developed. The devices fabri...
This thesis deals with the research and development of HFETs and HFET based circuits. One of the mai...
[[abstract]]© 1999 Institute of Electrical and Electronics Engineers-The microwave and power perform...
Described in this thesis are the growth, characterization, and modeling of heterojunction bipolar tr...
Metamorphic heterojunction bipolar transistor (MHBT) technology is attractive as it offers many adv...
Described in this thesis are the growth, characterization, and modeling of heterojunction bipolar tr...
High gain metamorphic InP/InGaAs/InP DHBTs (double heterojunction bipolar transistors) on GaAs subst...
GaAs-based heterojunction bipolar transistors (HBTs) are very attractive candidates for digital, ana...
InP-based materials were grown by MOCVD. Carbon was used as p-type dopant for InGaAs. Growth conditi...
The theoretical predictions for the performance of Heterojunction Bipolar Transistors (HBTs) have be...
The theoretical predictions for the performance of Heterojunction Bipolar Transistors (HBTs) have be...
The prevalence of mobile computing devices and emerging demand for high data rate communication have...
The main objectives of this thesis are to develop the fabrication technology for InP/InGaAs Heteroju...
The main objective of this work is to develop a baseline fabrication technology for GaAs-based Heter...
The main objective of this work is to develop a baseline fabrication technology for GaAs-based Heter...
117 p.In this work, high performance GaAs-based power HBT technology is developed. The devices fabri...
This thesis deals with the research and development of HFETs and HFET based circuits. One of the mai...
[[abstract]]© 1999 Institute of Electrical and Electronics Engineers-The microwave and power perform...
Described in this thesis are the growth, characterization, and modeling of heterojunction bipolar tr...
Metamorphic heterojunction bipolar transistor (MHBT) technology is attractive as it offers many adv...
Described in this thesis are the growth, characterization, and modeling of heterojunction bipolar tr...
High gain metamorphic InP/InGaAs/InP DHBTs (double heterojunction bipolar transistors) on GaAs subst...
GaAs-based heterojunction bipolar transistors (HBTs) are very attractive candidates for digital, ana...
InP-based materials were grown by MOCVD. Carbon was used as p-type dopant for InGaAs. Growth conditi...
The theoretical predictions for the performance of Heterojunction Bipolar Transistors (HBTs) have be...
The theoretical predictions for the performance of Heterojunction Bipolar Transistors (HBTs) have be...
The prevalence of mobile computing devices and emerging demand for high data rate communication have...