A novel transit time based analytical broadband noise model is developed and implemented for high frequency bipolar transistors. This model is applied to a complementary (npn + pnp) silicon germanium (SiGe) heterojunction bipolar transistors (HBT). A complete set of analytical equations are derived using this transit time noise model, to express the four fundamental noise parameters in terms of device parameters. A comprehensive analysis on the ac, dc and broadband noise performance of a 200 GHz SiGe HBT technology, under cryogenic temperatures, is presented. The transit time based noise model is used to analyze the RF noise behavior of the SiGe HBT down to 85 K. Significant performance gain is demonstrated in cryogenic temperatures indi...
The main objective of this thesis is to create an accurate, reliable yet simple noise model that cou...
This dissertation explores high-speed silicon-germanium (SiGe) heterojunction bipolar transistor (HB...
This paper addresses advanced low frequency noise measurements and modeling of SiGe HBTs. Results ha...
DC, RF and noise characteristics of advanced InP/InGaAs and Si/SiGe heterojunction bipolar transisto...
DC, RF and noise characteristics of advanced InP/InGaAs and Si/SiGe heterojunction bipolar transisto...
The design and the optimization of electronic systems often requires a detailed knowledge of the inh...
This paper presents an analytical model for high-frequency noise of high-speed SiGe heterojunction b...
In order to fulfil the roadmap for the development of telecommunication and information technologies...
The object of this thesis is to explore the low-frequency noise (LFN) in silicon-germanium (SiGe) he...
Le développement des technologies de communication et de l’information nécessite des composants semi...
Le développement des technologies de communication et de l’information nécessite des composants semi...
The high-frequency behavior of electronic devices is of major interest in the field of research and ...
Noise parameters of silicon germanium (SiGe) heterojunction bipolar transistors (HBTs) for different...
We present a comprehensive investigation of the cryogenic performance of third-generation silicon–ge...
Abstract—We present the first systematic experimental and modeling results of noise corner frequency...
The main objective of this thesis is to create an accurate, reliable yet simple noise model that cou...
This dissertation explores high-speed silicon-germanium (SiGe) heterojunction bipolar transistor (HB...
This paper addresses advanced low frequency noise measurements and modeling of SiGe HBTs. Results ha...
DC, RF and noise characteristics of advanced InP/InGaAs and Si/SiGe heterojunction bipolar transisto...
DC, RF and noise characteristics of advanced InP/InGaAs and Si/SiGe heterojunction bipolar transisto...
The design and the optimization of electronic systems often requires a detailed knowledge of the inh...
This paper presents an analytical model for high-frequency noise of high-speed SiGe heterojunction b...
In order to fulfil the roadmap for the development of telecommunication and information technologies...
The object of this thesis is to explore the low-frequency noise (LFN) in silicon-germanium (SiGe) he...
Le développement des technologies de communication et de l’information nécessite des composants semi...
Le développement des technologies de communication et de l’information nécessite des composants semi...
The high-frequency behavior of electronic devices is of major interest in the field of research and ...
Noise parameters of silicon germanium (SiGe) heterojunction bipolar transistors (HBTs) for different...
We present a comprehensive investigation of the cryogenic performance of third-generation silicon–ge...
Abstract—We present the first systematic experimental and modeling results of noise corner frequency...
The main objective of this thesis is to create an accurate, reliable yet simple noise model that cou...
This dissertation explores high-speed silicon-germanium (SiGe) heterojunction bipolar transistor (HB...
This paper addresses advanced low frequency noise measurements and modeling of SiGe HBTs. Results ha...