High power GaSb-based optically pumped VECSEL at 2.3 µm

Optimization of 2.5 μm VECSEL: Influence of the QW active region

Holl, P.
Rattunde, M.
Adler, S.
Bächle, A.
Diwo-Emmer, E.
Aidam, R.
Manz, C.
Köhler, K.
Wagner, J.

January 2016

Using the (AlGaIn)(AsSb) material system, VECSELs covering the 2 – 3 μm wavelength range can be real...

High-power optically-pumped VECSELs emitting in the 1310-nm and 1550-nm wavebands

Sirbu, A.
Mereuta, A.
Caliman, A.
Volet, N.
Zhu, Q.
Iakovlev, V.
Rautiainen, J.
Lyytikainen, J.
Okhotnikov, O.
Walczak, J.
Wasiak, M.
Czyszanowski, T.
Kapon, E.

June 2012

1300-nm, 1550-nm and 1480-nm wavelength, optically-pumped VECSELs based on wafer-fused InAlGaAs/InPA...

A 0.6W cW GaInNAs vertical external cavity surface-emitting laser at 1.32µm

Hopkins, J.M.
Smith, S.A.
Jeon, Chan-Wook
Sun, H.D.
Burns, D.
Calvez, S.
Dawson, M.D.
Jouhti, T.
Pessa, M.

January 2004

What is believed to be the first high-power vertical external cavity surface emitting laser (VECSEL)...

Barrier- and in-well pumped GaSb-based 2.3 µm VECSELs

Wagner, J.
Schulz, N.
Rattunde, M.
Ritzenthaler, C.
Manz, C.
Wild, C.
Köhler, K.

January 2007

We report on recent advances in the performance of GaSb-based optically-pumped vertical-external-cav...

GaSb-based VECSELs emitting at around 2.35 µm employing different optical pumping concepts

Schulz, N.
Rattunde, M.
Manz, C.
Köhler, K.
Wild, C.
Wagner, J.
Beyertt, S.-S.
Brauch, U.
Kübler, T.
Giesen, A.

January 2006

We report on the characteristics of (AlGaIn)(AsSb)-based optically pumped vertical-external-cavity s...

GaSb-based VECSEL exhibiting multiple-watt output power and high beam quality at a lasing wavelength of 2.25µm

Rösener, B.
Schulz, N.
Rattunde, M.
Manz, C.
Köhler, K.
Wagner, J.

January 2008

We report the realization of GaSb-based optically pumped vertical-external-cavity surface-emitting l...

GaSb-based VECSEL for high-power applications and Ho-pumping

Holl, Peter
Rattunde, Marcel
Adler, Steffen
Scholle, Karsten
Lamrini, Samir
Fuhrberg, Peter
Diwo-Emmer, Elke
Aidam, Rolf
Bronner, Wolfgang
Wagner, Joachim

January 2017

The (AlGaIn)(AsSb) material system has been shown to be ideally suited to realize VECSELs for the 2-...

GaSb-BASED HETEROSTRUCTURES FOR HIGH POWER AND PULSED LASER OPERATION

J. Paajaste A
S. Suomalainen A
R. Koskinen A
A. Härkönen A
S. Kivistö A

January 2010

We have studied monolithically grown GaSb-based vertical-cavity heterostructures. First we demonstra...

Tunable, single-frequency, diode-pumped 2.3um VECSEL

Hopkins, J.M.
MacLean, A.J.
Burns, D.
Riis, E.
Schulz, N.
Rattunde, M.
Manz, C.
Kohler, K.
Wagner, J.

June 2007

We report high-performance single-frequency operation of a directly diode-pumped GaSb-based vertical...

4W single transverse-mode VECSEL utilising intra-cavity diamond heat spreader

Harkonen, A.
Suomalainen, S.
Saarinen, E.
Orsila, L.
Koskinen, R.
Okhotnikov, O.
Calvez, S.
Dawson, M.D.

June 2006

An optically pumped semiconductor vertical external cavity surface emitting laser, with high output ...

GaSb-based semiconductor disk lasers: Recent advances in power scaling and narrow linewidth operation

Wagner, J.
Rattunde, M.
Töpper, T.
Kaspar, S.
Rösener, B.
Manz, C.
Köhler, K.

January 2012

The (AlGaIn)(AsSb) semiconductor materials system has been shown to be ideally suited to realize opt...

Tunable, single-frequency, diode-pumped 2.3 µm VECSEL

Hopkins, J.-M.
Maclean, A.J.
Burns, D.
Riis, E.
Schulz, N.
Rattunde, M.
Manz, C.
Köhler, K.
Wagner, J.

January 2007

We report high-performance single-frequency operation of a directly diode-pumped GaSb-based vertical...

Resonant in-Well pumping of GaSb-based VECSELs emitting the 2.Xum wavelength regime

Schulz, N.
Rattunde, M.
Manzor, A.C.S.
Kohler, K.
Wagner, J.
Hopkins, J.M.
Burns, D.

May 2007

We report on the epi-layer design and lasing characteristics of GaSb-based VECSELs emitting at 2.35m...

2-µm high-brilliance micro-cavity VECSEL with >2W output power

Kaspar, S.
Rattunde, M.
Holl, P.
Adler, S.
Schilling, C.
Bächle, A.
Manz, C.
Aidam, R.
Köhler, K.
Wagner, J.

January 2014

This paper presents recent advances of 2-µm GaSb-based vertical external cavity surface emitting las...

0.6WCWGaInNAs vertical external-cavity surface emitting laser operating at 1.32um

Hopkins, J.M.
Smith, S.A.
Jeon, C.W.
Sun, H.D.
Burns, D.
Calvez, S.
Dawson, M.D.
Jouhti, T.
Pessa, M.

January 2004

What is believed to be the first high-power vertical external cavity surface emitting laser (VECSEL)...

Optimization of 2.5 μm VECSEL: Influence of the QW active region

Holl, P.
Rattunde, M.
Adler, S.
Bächle, A.
Diwo-Emmer, E.
Aidam, R.
Manz, C.
Köhler, K.
Wagner, J.

January 2016

Using the (AlGaIn)(AsSb) material system, VECSELs covering the 2 – 3 μm wavelength range can be real...

High-power optically-pumped VECSELs emitting in the 1310-nm and 1550-nm wavebands

Sirbu, A.
Mereuta, A.
Caliman, A.
Volet, N.
Zhu, Q.
Iakovlev, V.
Rautiainen, J.
Lyytikainen, J.
Okhotnikov, O.
Walczak, J.
Wasiak, M.
Czyszanowski, T.
Kapon, E.

June 2012

1300-nm, 1550-nm and 1480-nm wavelength, optically-pumped VECSELs based on wafer-fused InAlGaAs/InPA...

A 0.6W cW GaInNAs vertical external cavity surface-emitting laser at 1.32µm

Hopkins, J.M.
Smith, S.A.
Jeon, Chan-Wook
Sun, H.D.
Burns, D.
Calvez, S.
Dawson, M.D.
Jouhti, T.
Pessa, M.

January 2004

What is believed to be the first high-power vertical external cavity surface emitting laser (VECSEL)...

Barrier- and in-well pumped GaSb-based 2.3 µm VECSELs

Wagner, J.
Schulz, N.
Rattunde, M.
Ritzenthaler, C.
Manz, C.
Wild, C.
Köhler, K.

January 2007

We report on recent advances in the performance of GaSb-based optically-pumped vertical-external-cav...

GaSb-based VECSELs emitting at around 2.35 µm employing different optical pumping concepts

Schulz, N.
Rattunde, M.
Manz, C.
Köhler, K.
Wild, C.
Wagner, J.
Beyertt, S.-S.
Brauch, U.
Kübler, T.
Giesen, A.

January 2006

We report on the characteristics of (AlGaIn)(AsSb)-based optically pumped vertical-external-cavity s...

GaSb-based VECSEL exhibiting multiple-watt output power and high beam quality at a lasing wavelength of 2.25µm

Rösener, B.
Schulz, N.
Rattunde, M.
Manz, C.
Köhler, K.
Wagner, J.

January 2008

We report the realization of GaSb-based optically pumped vertical-external-cavity surface-emitting l...

GaSb-based VECSEL for high-power applications and Ho-pumping

Holl, Peter
Rattunde, Marcel
Adler, Steffen
Scholle, Karsten
Lamrini, Samir
Fuhrberg, Peter
Diwo-Emmer, Elke
Aidam, Rolf
Bronner, Wolfgang
Wagner, Joachim

January 2017

The (AlGaIn)(AsSb) material system has been shown to be ideally suited to realize VECSELs for the 2-...

GaSb-BASED HETEROSTRUCTURES FOR HIGH POWER AND PULSED LASER OPERATION

J. Paajaste A
S. Suomalainen A
R. Koskinen A
A. Härkönen A
S. Kivistö A

January 2010

We have studied monolithically grown GaSb-based vertical-cavity heterostructures. First we demonstra...

Tunable, single-frequency, diode-pumped 2.3um VECSEL

Hopkins, J.M.
MacLean, A.J.
Burns, D.
Riis, E.
Schulz, N.
Rattunde, M.
Manz, C.
Kohler, K.
Wagner, J.

June 2007

We report high-performance single-frequency operation of a directly diode-pumped GaSb-based vertical...

4W single transverse-mode VECSEL utilising intra-cavity diamond heat spreader

Harkonen, A.
Suomalainen, S.
Saarinen, E.
Orsila, L.
Koskinen, R.
Okhotnikov, O.
Calvez, S.
Dawson, M.D.

June 2006

An optically pumped semiconductor vertical external cavity surface emitting laser, with high output ...

GaSb-based semiconductor disk lasers: Recent advances in power scaling and narrow linewidth operation

Wagner, J.
Rattunde, M.
Töpper, T.
Kaspar, S.
Rösener, B.
Manz, C.
Köhler, K.

January 2012

The (AlGaIn)(AsSb) semiconductor materials system has been shown to be ideally suited to realize opt...

Tunable, single-frequency, diode-pumped 2.3 µm VECSEL

Hopkins, J.-M.
Maclean, A.J.
Burns, D.
Riis, E.
Schulz, N.
Rattunde, M.
Manz, C.
Köhler, K.
Wagner, J.

January 2007

We report high-performance single-frequency operation of a directly diode-pumped GaSb-based vertical...

Resonant in-Well pumping of GaSb-based VECSELs emitting the 2.Xum wavelength regime

Schulz, N.
Rattunde, M.
Manzor, A.C.S.
Kohler, K.
Wagner, J.
Hopkins, J.M.
Burns, D.

May 2007

We report on the epi-layer design and lasing characteristics of GaSb-based VECSELs emitting at 2.35m...

2-µm high-brilliance micro-cavity VECSEL with >2W output power

Kaspar, S.
Rattunde, M.
Holl, P.
Adler, S.
Schilling, C.
Bächle, A.
Manz, C.
Aidam, R.
Köhler, K.
Wagner, J.

January 2014

This paper presents recent advances of 2-µm GaSb-based vertical external cavity surface emitting las...

0.6WCWGaInNAs vertical external-cavity surface emitting laser operating at 1.32um

Hopkins, J.M.
Smith, S.A.
Jeon, C.W.
Sun, H.D.
Burns, D.
Calvez, S.
Dawson, M.D.
Jouhti, T.
Pessa, M.

January 2004

What is believed to be the first high-power vertical external cavity surface emitting laser (VECSEL)...

Optimization of 2.5 μm VECSEL: Influence of the QW active region

Holl, P.
Rattunde, M.
Adler, S.
Bächle, A.
Diwo-Emmer, E.
Aidam, R.
Manz, C.
Köhler, K.
Wagner, J.

January 2016

Using the (AlGaIn)(AsSb) material system, VECSELs covering the 2 – 3 μm wavelength range can be real...

High-power optically-pumped VECSELs emitting in the 1310-nm and 1550-nm wavebands

Sirbu, A.
Mereuta, A.
Caliman, A.
Volet, N.
Zhu, Q.
Iakovlev, V.
Rautiainen, J.
Lyytikainen, J.
Okhotnikov, O.
Walczak, J.
Wasiak, M.
Czyszanowski, T.
Kapon, E.

June 2012

1300-nm, 1550-nm and 1480-nm wavelength, optically-pumped VECSELs based on wafer-fused InAlGaAs/InPA...

A 0.6W cW GaInNAs vertical external cavity surface-emitting laser at 1.32µm

Hopkins, J.M.
Smith, S.A.
Jeon, Chan-Wook
Sun, H.D.
Burns, D.
Calvez, S.
Dawson, M.D.
Jouhti, T.
Pessa, M.

January 2004

What is believed to be the first high-power vertical external cavity surface emitting laser (VECSEL)...

High power GaSb-based optically pumped VECSEL at 2.3 µm

Abstract

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High power GaSb-based optically pumped VECSEL at 2.3 µm

Abstract

Extracted data

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