Tunable, single-frequency, diode-pumped 2.3 µm VECSEL

High power GaSb-based optically pumped VECSEL at 2.3 µm

Schulz, N.
Rattunde, M.
Manz, C.
Köhler, K.
Wild, C.
Wagner, J.

January 2006

We report on the operation and characterization of a GaSb-based VECSEL at 2.33m. Using an intra-cavi...

Single-frequency and Dual-wavelength Operation of Vertical-external-cavity Surface-emitting Lasers

Zhang, Fan
Koch, Martin (Prof. Dr.)

January 2017

Vertical-external-cavity surface-emitting lasers (VECSELs), also referred to as semiconductor disk l...

0.6WCWGaInNAs vertical external-cavity surface emitting laser operating at 1.32um

Hopkins, J.M.
Smith, S.A.
Jeon, C.W.
Sun, H.D.
Burns, D.
Calvez, S.
Dawson, M.D.
Jouhti, T.
Pessa, M.

January 2004

What is believed to be the first high-power vertical external cavity surface emitting laser (VECSEL)...

Tunable, single-frequency, diode-pumped 2.3um VECSEL

Hopkins, J.M.
MacLean, A.J.
Burns, D.
Riis, E.
Schulz, N.
Rattunde, M.
Manz, C.
Kohler, K.
Wagner, J.

June 2007

We report high-performance single-frequency operation of a directly diode-pumped GaSb-based vertical...

Actively stabilised single-frequency red VECSEL

Morton, L.G.
Foreman, H.D.
Hastie, J.E.
Dawson, M.D.
Riis, E.

January 2007

We report an actively stabilised single-frequency vertical external cavity surface emitting laser op...

Above 2-µm emitting GaSb-based semiconductor disk laser with <100-kHz linewidth at 1000-mW output power

Kaspar, S.
Rattunde, M.
Töpper, T.
Rösener, B.
Manz, C.
Köhler, K.
Wagner, J.

January 2012

In this paper we report on the development of narrow-linewidth vertical-external-cavity surface-emit...

GaSb-based VECSEL exhibiting multiple-watt output power and high beam quality at a lasing wavelength of 2.25µm

Rösener, B.
Schulz, N.
Rattunde, M.
Manz, C.
Köhler, K.
Wagner, J.

January 2008

We report the realization of GaSb-based optically pumped vertical-external-cavity surface-emitting l...

GaSb-based VECSELs emitting at around 2.35 µm employing different optical pumping concepts

Schulz, N.
Rattunde, M.
Manz, C.
Köhler, K.
Wild, C.
Wagner, J.
Beyertt, S.-S.
Brauch, U.
Kübler, T.
Giesen, A.

January 2006

We report on the characteristics of (AlGaIn)(AsSb)-based optically pumped vertical-external-cavity s...

High-power tunable low-noise coherent source at 1.06µm based on a surface-emitting semiconductor laser

CHOMET, Baptiste
ZHAO, Jian
FERRIERES, Laurence
MYARA, Mikhaël
GUIRAUD, Germain
BEAUDOIN, Gregoire
LECOCQ, Vincent
SAGNES, Isabelle
TRAYNOR, Nicholas
SANTARELLI, Giorgio
DENET, Stephane
GARNACHE, Arnaud

January 2018

Exploiting III-V semiconductor technologies, vertical external-cavity surface-emitting laser (VECSEL...

Single frequency vertical external cavity surface emitting lasers

Gardner, Kyle Scot

January 2007

The thesis presents the development and implementation of single frequency vertical external cavity ...

Barrier- and in-well pumped GaSb-based 2.3 µm VECSELs

Wagner, J.
Schulz, N.
Rattunde, M.
Ritzenthaler, C.
Manz, C.
Wild, C.
Köhler, K.

January 2007

We report on recent advances in the performance of GaSb-based optically-pumped vertical-external-cav...

High performance 2.2um optically-pumped vertical external-cavity surface-emitting laser

Hopkins, J.M.
Preston, R.D.
MacLean, A.J.
Calvez, S.
Sun, H.
Ng, J.
Steer, M.
Hopkinson, M.
Burns, D.

January 2007

We report the operation of an optically-pumped vertical-external-cavity surface-emitting laser (OP-V...

GaSb-BASED HETEROSTRUCTURES FOR HIGH POWER AND PULSED LASER OPERATION

J. Paajaste A
S. Suomalainen A
R. Koskinen A
A. Härkönen A
S. Kivistö A

January 2010

We have studied monolithically grown GaSb-based vertical-cavity heterostructures. First we demonstra...

2-µm high-brilliance micro-cavity VECSEL with >2W output power

Kaspar, S.
Rattunde, M.
Holl, P.
Adler, S.
Schilling, C.
Bächle, A.
Manz, C.
Aidam, R.
Köhler, K.
Wagner, J.

January 2014

This paper presents recent advances of 2-µm GaSb-based vertical external cavity surface emitting las...

GaSb-based semiconductor disk lasers: Recent advances in power scaling and narrow linewidth operation

Wagner, J.
Rattunde, M.
Töpper, T.
Kaspar, S.
Rösener, B.
Manz, C.
Köhler, K.

January 2012

The (AlGaIn)(AsSb) semiconductor materials system has been shown to be ideally suited to realize opt...

High power GaSb-based optically pumped VECSEL at 2.3 µm

Schulz, N.
Rattunde, M.
Manz, C.
Köhler, K.
Wild, C.
Wagner, J.

January 2006

We report on the operation and characterization of a GaSb-based VECSEL at 2.33m. Using an intra-cavi...

Single-frequency and Dual-wavelength Operation of Vertical-external-cavity Surface-emitting Lasers

Zhang, Fan
Koch, Martin (Prof. Dr.)

January 2017

Vertical-external-cavity surface-emitting lasers (VECSELs), also referred to as semiconductor disk l...

0.6WCWGaInNAs vertical external-cavity surface emitting laser operating at 1.32um

Hopkins, J.M.
Smith, S.A.
Jeon, C.W.
Sun, H.D.
Burns, D.
Calvez, S.
Dawson, M.D.
Jouhti, T.
Pessa, M.

January 2004

What is believed to be the first high-power vertical external cavity surface emitting laser (VECSEL)...

Tunable, single-frequency, diode-pumped 2.3um VECSEL

Hopkins, J.M.
MacLean, A.J.
Burns, D.
Riis, E.
Schulz, N.
Rattunde, M.
Manz, C.
Kohler, K.
Wagner, J.

June 2007

We report high-performance single-frequency operation of a directly diode-pumped GaSb-based vertical...

Actively stabilised single-frequency red VECSEL

Morton, L.G.
Foreman, H.D.
Hastie, J.E.
Dawson, M.D.
Riis, E.

January 2007

We report an actively stabilised single-frequency vertical external cavity surface emitting laser op...

Above 2-µm emitting GaSb-based semiconductor disk laser with <100-kHz linewidth at 1000-mW output power

Kaspar, S.
Rattunde, M.
Töpper, T.
Rösener, B.
Manz, C.
Köhler, K.
Wagner, J.

January 2012

In this paper we report on the development of narrow-linewidth vertical-external-cavity surface-emit...

GaSb-based VECSEL exhibiting multiple-watt output power and high beam quality at a lasing wavelength of 2.25µm

Rösener, B.
Schulz, N.
Rattunde, M.
Manz, C.
Köhler, K.
Wagner, J.

January 2008

We report the realization of GaSb-based optically pumped vertical-external-cavity surface-emitting l...

GaSb-based VECSELs emitting at around 2.35 µm employing different optical pumping concepts

Schulz, N.
Rattunde, M.
Manz, C.
Köhler, K.
Wild, C.
Wagner, J.
Beyertt, S.-S.
Brauch, U.
Kübler, T.
Giesen, A.

January 2006

We report on the characteristics of (AlGaIn)(AsSb)-based optically pumped vertical-external-cavity s...

High-power tunable low-noise coherent source at 1.06µm based on a surface-emitting semiconductor laser

CHOMET, Baptiste
ZHAO, Jian
FERRIERES, Laurence
MYARA, Mikhaël
GUIRAUD, Germain
BEAUDOIN, Gregoire
LECOCQ, Vincent
SAGNES, Isabelle
TRAYNOR, Nicholas
SANTARELLI, Giorgio
DENET, Stephane
GARNACHE, Arnaud

January 2018

Exploiting III-V semiconductor technologies, vertical external-cavity surface-emitting laser (VECSEL...

Single frequency vertical external cavity surface emitting lasers

Gardner, Kyle Scot

January 2007

The thesis presents the development and implementation of single frequency vertical external cavity ...

Barrier- and in-well pumped GaSb-based 2.3 µm VECSELs

Wagner, J.
Schulz, N.
Rattunde, M.
Ritzenthaler, C.
Manz, C.
Wild, C.
Köhler, K.

January 2007

We report on recent advances in the performance of GaSb-based optically-pumped vertical-external-cav...

High performance 2.2um optically-pumped vertical external-cavity surface-emitting laser

Hopkins, J.M.
Preston, R.D.
MacLean, A.J.
Calvez, S.
Sun, H.
Ng, J.
Steer, M.
Hopkinson, M.
Burns, D.

January 2007

We report the operation of an optically-pumped vertical-external-cavity surface-emitting laser (OP-V...

GaSb-BASED HETEROSTRUCTURES FOR HIGH POWER AND PULSED LASER OPERATION

J. Paajaste A
S. Suomalainen A
R. Koskinen A
A. Härkönen A
S. Kivistö A

January 2010

We have studied monolithically grown GaSb-based vertical-cavity heterostructures. First we demonstra...

2-µm high-brilliance micro-cavity VECSEL with >2W output power

Kaspar, S.
Rattunde, M.
Holl, P.
Adler, S.
Schilling, C.
Bächle, A.
Manz, C.
Aidam, R.
Köhler, K.
Wagner, J.

January 2014

This paper presents recent advances of 2-µm GaSb-based vertical external cavity surface emitting las...

GaSb-based semiconductor disk lasers: Recent advances in power scaling and narrow linewidth operation

Wagner, J.
Rattunde, M.
Töpper, T.
Kaspar, S.
Rösener, B.
Manz, C.
Köhler, K.

January 2012

The (AlGaIn)(AsSb) semiconductor materials system has been shown to be ideally suited to realize opt...

High power GaSb-based optically pumped VECSEL at 2.3 µm

Schulz, N.
Rattunde, M.
Manz, C.
Köhler, K.
Wild, C.
Wagner, J.

January 2006

We report on the operation and characterization of a GaSb-based VECSEL at 2.33m. Using an intra-cavi...

Single-frequency and Dual-wavelength Operation of Vertical-external-cavity Surface-emitting Lasers

Zhang, Fan
Koch, Martin (Prof. Dr.)

January 2017

Vertical-external-cavity surface-emitting lasers (VECSELs), also referred to as semiconductor disk l...

0.6WCWGaInNAs vertical external-cavity surface emitting laser operating at 1.32um

Hopkins, J.M.
Smith, S.A.
Jeon, C.W.
Sun, H.D.
Burns, D.
Calvez, S.
Dawson, M.D.
Jouhti, T.
Pessa, M.

January 2004

What is believed to be the first high-power vertical external cavity surface emitting laser (VECSEL)...

Tunable, single-frequency, diode-pumped 2.3 µm VECSEL

Abstract

Extracted data

Tunable, single-frequency, diode-pumped 2.3 µm VECSEL

Abstract

Extracted data

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