Resonant in-Well pumping of GaSb-based VECSELs emitting the 2.Xum wavelength regime

GaSb-based VCSELs emitting in the mid-infrared wavelength range (2-3 µm) grown by MBE

Cerutti, Laurent
Ducanchez, Arnaud
Narcy, Grégoire
Grech, Pierre
Boissier, G.
Garnache, Arnaud
Tournié, Eric
Genty, Frédéric

March 2009

International Conference on Molecular Beam Epitaxy (MBE-XV), The 15th International Conference on Mo...

GaSb-based VECSEL exhibiting multiple-watt output power and high beam quality at a lasing wavelength of 2.25µm

Rösener, B.
Schulz, N.
Rattunde, M.
Manz, C.
Köhler, K.
Wagner, J.

January 2008

We report the realization of GaSb-based optically pumped vertical-external-cavity surface-emitting l...

2-µm high-brilliance micro-cavity VECSEL with >2W output power

Kaspar, S.
Rattunde, M.
Holl, P.
Adler, S.
Schilling, C.
Bächle, A.
Manz, C.
Aidam, R.
Köhler, K.
Wagner, J.

January 2014

This paper presents recent advances of 2-µm GaSb-based vertical external cavity surface emitting las...

Resonant in-Well pumping of GaSb-based VECSELs emitting the 2.Xum wavelength regime

Schulz, N.
Rattunde, M.
Manzor, A.C.S.
Kohler, K.
Wagner, J.
Hopkins, J.M.
Burns, D.

May 2007

We report on the epi-layer design and lasing characteristics of GaSb-based VECSELs emitting at 2.35m...

GaSb-based VECSELs emitting at around 2.35 µm employing different optical pumping concepts

Schulz, N.
Rattunde, M.
Manz, C.
Köhler, K.
Wild, C.
Wagner, J.
Beyertt, S.-S.
Brauch, U.
Kübler, T.
Giesen, A.

January 2006

We report on the characteristics of (AlGaIn)(AsSb)-based optically pumped vertical-external-cavity s...

Barrier- and in-well pumped GaSb-based 2.3 µm VECSELs

Wagner, J.
Schulz, N.
Rattunde, M.
Ritzenthaler, C.
Manz, C.
Wild, C.
Köhler, K.

January 2007

We report on recent advances in the performance of GaSb-based optically-pumped vertical-external-cav...

An improved active region concept for highly efficient GaSb-based optically in-well pumped vertical-external-cavity surface-emitting lasers

Schulz, N.
Rösener, B.
Moser, R.
Rattunde, M.
Manz, C.
Köhler, K.
Wagner, J.

January 2008

An improved active region concept for GaSb-based optically pumped vertical-external-cavity surface-e...

Resonant optical in-well pumping of an (AlGaln)(AsSb)-based vertical-external-cavity surface-emitting laser emitting at 2.35 µm

Schulz, N.
Rattunde, M.
Ritzenthaler, C.
Rösener, B.
Manz, C.
Köhler, K.
Wagner, J.
Brauch, U.

January 2007

The semiconductor heterostructure design and lasing characteristics of an optically in-well pumped (...

A novel active region concept for highly efficient GaSb-based optically in-well pumped semiconductor disk lasers

Wagner, J.
Rösener, B.
Schulz, N.
Rattunde, M.
Moser, R.
Manz, C.
Köhler, K.

January 2009

A novel active region concept for GaSb-based optically pumped mid-infrared vertical external cavity ...

High power GaSb-based optically pumped VECSEL at 2.3 µm

Schulz, N.
Rattunde, M.
Manz, C.
Köhler, K.
Wild, C.
Wagner, J.

January 2006

We report on the operation and characterization of a GaSb-based VECSEL at 2.33m. Using an intra-cavi...

GaSb-based semiconductor disk lasers: Recent advances in power scaling and narrow linewidth operation

Wagner, J.
Rattunde, M.
Töpper, T.
Kaspar, S.
Rösener, B.
Manz, C.
Köhler, K.

January 2012

The (AlGaIn)(AsSb) semiconductor materials system has been shown to be ideally suited to realize opt...

GaSb-BASED HETEROSTRUCTURES FOR HIGH POWER AND PULSED LASER OPERATION

J. Paajaste A
S. Suomalainen A
R. Koskinen A
A. Härkönen A
S. Kivistö A

January 2010

We have studied monolithically grown GaSb-based vertical-cavity heterostructures. First we demonstra...

Optimization of 2.5 μm VECSEL: Influence of the QW active region

Holl, P.
Rattunde, M.
Adler, S.
Bächle, A.
Diwo-Emmer, E.
Aidam, R.
Manz, C.
Köhler, K.
Wagner, J.

January 2016

Using the (AlGaIn)(AsSb) material system, VECSELs covering the 2 – 3 μm wavelength range can be real...

GaSb-based VECSEL for high-power applications and Ho-pumping

Holl, Peter
Rattunde, Marcel
Adler, Steffen
Scholle, Karsten
Lamrini, Samir
Fuhrberg, Peter
Diwo-Emmer, Elke
Aidam, Rolf
Bronner, Wolfgang
Wagner, Joachim

January 2017

The (AlGaIn)(AsSb) material system has been shown to be ideally suited to realize VECSELs for the 2-...

Long wavelength electrically pumped GaSb-based buried tunnel junction VCSELs

Bachmann, Alexander
Arafin, Shamsul
Kashani-Shirazi, Kaveh
Amann, Markus-Christian

January 2010

AbstractLong wavelength lasers are attractive light sources for free-space communications, military ...

GaSb-based VCSELs emitting in the mid-infrared wavelength range (2-3 µm) grown by MBE

Cerutti, Laurent
Ducanchez, Arnaud
Narcy, Grégoire
Grech, Pierre
Boissier, G.
Garnache, Arnaud
Tournié, Eric
Genty, Frédéric

March 2009

International Conference on Molecular Beam Epitaxy (MBE-XV), The 15th International Conference on Mo...

GaSb-based VECSEL exhibiting multiple-watt output power and high beam quality at a lasing wavelength of 2.25µm

Rösener, B.
Schulz, N.
Rattunde, M.
Manz, C.
Köhler, K.
Wagner, J.

January 2008

We report the realization of GaSb-based optically pumped vertical-external-cavity surface-emitting l...

2-µm high-brilliance micro-cavity VECSEL with >2W output power

Kaspar, S.
Rattunde, M.
Holl, P.
Adler, S.
Schilling, C.
Bächle, A.
Manz, C.
Aidam, R.
Köhler, K.
Wagner, J.

January 2014

This paper presents recent advances of 2-µm GaSb-based vertical external cavity surface emitting las...

Resonant in-Well pumping of GaSb-based VECSELs emitting the 2.Xum wavelength regime

Schulz, N.
Rattunde, M.
Manzor, A.C.S.
Kohler, K.
Wagner, J.
Hopkins, J.M.
Burns, D.

May 2007

We report on the epi-layer design and lasing characteristics of GaSb-based VECSELs emitting at 2.35m...

GaSb-based VECSELs emitting at around 2.35 µm employing different optical pumping concepts

Schulz, N.
Rattunde, M.
Manz, C.
Köhler, K.
Wild, C.
Wagner, J.
Beyertt, S.-S.
Brauch, U.
Kübler, T.
Giesen, A.

January 2006

We report on the characteristics of (AlGaIn)(AsSb)-based optically pumped vertical-external-cavity s...

Barrier- and in-well pumped GaSb-based 2.3 µm VECSELs

Wagner, J.
Schulz, N.
Rattunde, M.
Ritzenthaler, C.
Manz, C.
Wild, C.
Köhler, K.

January 2007

We report on recent advances in the performance of GaSb-based optically-pumped vertical-external-cav...

An improved active region concept for highly efficient GaSb-based optically in-well pumped vertical-external-cavity surface-emitting lasers

Schulz, N.
Rösener, B.
Moser, R.
Rattunde, M.
Manz, C.
Köhler, K.
Wagner, J.

January 2008

An improved active region concept for GaSb-based optically pumped vertical-external-cavity surface-e...

Resonant optical in-well pumping of an (AlGaln)(AsSb)-based vertical-external-cavity surface-emitting laser emitting at 2.35 µm

Schulz, N.
Rattunde, M.
Ritzenthaler, C.
Rösener, B.
Manz, C.
Köhler, K.
Wagner, J.
Brauch, U.

January 2007

The semiconductor heterostructure design and lasing characteristics of an optically in-well pumped (...

A novel active region concept for highly efficient GaSb-based optically in-well pumped semiconductor disk lasers

Wagner, J.
Rösener, B.
Schulz, N.
Rattunde, M.
Moser, R.
Manz, C.
Köhler, K.

January 2009

A novel active region concept for GaSb-based optically pumped mid-infrared vertical external cavity ...

High power GaSb-based optically pumped VECSEL at 2.3 µm

Schulz, N.
Rattunde, M.
Manz, C.
Köhler, K.
Wild, C.
Wagner, J.

January 2006

We report on the operation and characterization of a GaSb-based VECSEL at 2.33m. Using an intra-cavi...

GaSb-based semiconductor disk lasers: Recent advances in power scaling and narrow linewidth operation

Wagner, J.
Rattunde, M.
Töpper, T.
Kaspar, S.
Rösener, B.
Manz, C.
Köhler, K.

January 2012

The (AlGaIn)(AsSb) semiconductor materials system has been shown to be ideally suited to realize opt...

GaSb-BASED HETEROSTRUCTURES FOR HIGH POWER AND PULSED LASER OPERATION

J. Paajaste A
S. Suomalainen A
R. Koskinen A
A. Härkönen A
S. Kivistö A

January 2010

We have studied monolithically grown GaSb-based vertical-cavity heterostructures. First we demonstra...

Optimization of 2.5 μm VECSEL: Influence of the QW active region

Holl, P.
Rattunde, M.
Adler, S.
Bächle, A.
Diwo-Emmer, E.
Aidam, R.
Manz, C.
Köhler, K.
Wagner, J.

January 2016

Using the (AlGaIn)(AsSb) material system, VECSELs covering the 2 – 3 μm wavelength range can be real...

GaSb-based VECSEL for high-power applications and Ho-pumping

Holl, Peter
Rattunde, Marcel
Adler, Steffen
Scholle, Karsten
Lamrini, Samir
Fuhrberg, Peter
Diwo-Emmer, Elke
Aidam, Rolf
Bronner, Wolfgang
Wagner, Joachim

January 2017

The (AlGaIn)(AsSb) material system has been shown to be ideally suited to realize VECSELs for the 2-...

Long wavelength electrically pumped GaSb-based buried tunnel junction VCSELs

Bachmann, Alexander
Arafin, Shamsul
Kashani-Shirazi, Kaveh
Amann, Markus-Christian

January 2010

AbstractLong wavelength lasers are attractive light sources for free-space communications, military ...

GaSb-based VCSELs emitting in the mid-infrared wavelength range (2-3 µm) grown by MBE

Cerutti, Laurent
Ducanchez, Arnaud
Narcy, Grégoire
Grech, Pierre
Boissier, G.
Garnache, Arnaud
Tournié, Eric
Genty, Frédéric

March 2009

International Conference on Molecular Beam Epitaxy (MBE-XV), The 15th International Conference on Mo...

GaSb-based VECSEL exhibiting multiple-watt output power and high beam quality at a lasing wavelength of 2.25µm

Rösener, B.
Schulz, N.
Rattunde, M.
Manz, C.
Köhler, K.
Wagner, J.

January 2008

We report the realization of GaSb-based optically pumped vertical-external-cavity surface-emitting l...

2-µm high-brilliance micro-cavity VECSEL with >2W output power

Kaspar, S.
Rattunde, M.
Holl, P.
Adler, S.
Schilling, C.
Bächle, A.
Manz, C.
Aidam, R.
Köhler, K.
Wagner, J.

January 2014

This paper presents recent advances of 2-µm GaSb-based vertical external cavity surface emitting las...

Resonant in-Well pumping of GaSb-based VECSELs emitting the 2.Xum wavelength regime

Abstract

Extracted data

Resonant in-Well pumping of GaSb-based VECSELs emitting the 2.Xum wavelength regime

Abstract

Extracted data

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