We report on recent advances in the performance of GaSb-based optically-pumped vertical-external-cavity surface-emitting lasers (VECSELs) emitting at wavelengths around 2.3 µm. Both barrier and in-well pumped VECSELs have been fabricated and analysed. Both variants incorporate a diamond intra-cavity heat spreader as an efficient means for heat extraction from the active region. For barrier-pumping, a maximum output power of 1.5 W with a beam propagation factor of M2 <= 3 has been achieved at a heat sink temperature of -20°C. Using in-well pumping at 1.96 µm, the efficiency could be more than doubled, compared to barrier pumping, due to the significantly reduced quantum deficit, yielding a slope efficiency of 31% at a heat sink temperature o...
We report high-performance single-frequency operation of a directly diode-pumped GaSb-based vertical...
We report high-performance single-frequency operation of a directly diode-pumped GaSb-based vertical...
International audienceThe growth conditions and the operation of a diode-pumped AlGaAsSb/GaInAsSb ty...
We report on the characteristics of (AlGaIn)(AsSb)-based optically pumped vertical-external-cavity s...
We report on the operation and characterization of a GaSb-based VECSEL at 2.33m. Using an intra-cavi...
An improved active region concept for GaSb-based optically pumped vertical-external-cavity surface-e...
We report the realization of GaSb-based optically pumped vertical-external-cavity surface-emitting l...
The (AlGaIn)(AsSb) semiconductor materials system has been shown to be ideally suited to realize opt...
The semiconductor heterostructure design and lasing characteristics of an optically in-well pumped (...
This paper presents recent advances of 2-µm GaSb-based vertical external cavity surface emitting las...
A novel active region concept for GaSb-based optically pumped mid-infrared vertical external cavity ...
We report on the epi-layer design and lasing characteristics of GaSb-based VECSELs emitting at 2.35m...
We have studied monolithically grown GaSb-based vertical-cavity heterostructures. First we demonstra...
We report on the output power performance and beam profile analysis of an optically pumped GaSb-base...
An optically pumped semiconductor vertical external cavity surface emitting laser, with high output ...
We report high-performance single-frequency operation of a directly diode-pumped GaSb-based vertical...
We report high-performance single-frequency operation of a directly diode-pumped GaSb-based vertical...
International audienceThe growth conditions and the operation of a diode-pumped AlGaAsSb/GaInAsSb ty...
We report on the characteristics of (AlGaIn)(AsSb)-based optically pumped vertical-external-cavity s...
We report on the operation and characterization of a GaSb-based VECSEL at 2.33m. Using an intra-cavi...
An improved active region concept for GaSb-based optically pumped vertical-external-cavity surface-e...
We report the realization of GaSb-based optically pumped vertical-external-cavity surface-emitting l...
The (AlGaIn)(AsSb) semiconductor materials system has been shown to be ideally suited to realize opt...
The semiconductor heterostructure design and lasing characteristics of an optically in-well pumped (...
This paper presents recent advances of 2-µm GaSb-based vertical external cavity surface emitting las...
A novel active region concept for GaSb-based optically pumped mid-infrared vertical external cavity ...
We report on the epi-layer design and lasing characteristics of GaSb-based VECSELs emitting at 2.35m...
We have studied monolithically grown GaSb-based vertical-cavity heterostructures. First we demonstra...
We report on the output power performance and beam profile analysis of an optically pumped GaSb-base...
An optically pumped semiconductor vertical external cavity surface emitting laser, with high output ...
We report high-performance single-frequency operation of a directly diode-pumped GaSb-based vertical...
We report high-performance single-frequency operation of a directly diode-pumped GaSb-based vertical...
International audienceThe growth conditions and the operation of a diode-pumped AlGaAsSb/GaInAsSb ty...