Gallium Nitride is a key technology with high system impact for European industries for communication-, military-, and space-applications. This paper reviews the recent technical development activities of III-Nitride devices for RF applications in Europe. After the completion of several significant research projects, the technical status is reviewed based on recent examples relevant to the state-of-the-art in Europe. Further, a European perspective for the industrialization and exploitation of this technology will be discussed
ABSTRACT — The paper presents an overview on the European status of electronic devices for micro- an...
It is the most exciting time for power electronics in decades. The combination of new applications, ...
The depth of Euronitride research continues to unfold as more results become available and, judging ...
The article describes the results related to development of microwave transistors, which are to be u...
Gallium-nitride is an emerging power semiconductor technology with considerable promise for applicat...
Although not often reported as such, R&D, equipment and materials supply for III-nitride materials a...
Gallium Nitride's superior physical properties, in comparison with other semiconductors, make GaNHEM...
AbstractTremendous progress has been made in recent years in the growth, doping and processing techn...
Gallium Nitride 's superior physical properties, in comparison with other semiconductors, make GaN H...
This paper covers various sensors and microsystems based on gallium nitride (GaN) micro mechanical (...
The evolution of wide-bandgap semiconductor transistor technology is placed in historical context wi...
III-nitride electron devices are attracting considerable attention for wireless communication equipm...
The evolution of wide-bandgap semiconductor transistor technology is placed in historical context wi...
The evolution of wide-bandgap semiconductor transistor technology is placed in historical context wi...
In this overview paper, a summary of the European academic and industrial status on RF GaN is given....
ABSTRACT — The paper presents an overview on the European status of electronic devices for micro- an...
It is the most exciting time for power electronics in decades. The combination of new applications, ...
The depth of Euronitride research continues to unfold as more results become available and, judging ...
The article describes the results related to development of microwave transistors, which are to be u...
Gallium-nitride is an emerging power semiconductor technology with considerable promise for applicat...
Although not often reported as such, R&D, equipment and materials supply for III-nitride materials a...
Gallium Nitride's superior physical properties, in comparison with other semiconductors, make GaNHEM...
AbstractTremendous progress has been made in recent years in the growth, doping and processing techn...
Gallium Nitride 's superior physical properties, in comparison with other semiconductors, make GaN H...
This paper covers various sensors and microsystems based on gallium nitride (GaN) micro mechanical (...
The evolution of wide-bandgap semiconductor transistor technology is placed in historical context wi...
III-nitride electron devices are attracting considerable attention for wireless communication equipm...
The evolution of wide-bandgap semiconductor transistor technology is placed in historical context wi...
The evolution of wide-bandgap semiconductor transistor technology is placed in historical context wi...
In this overview paper, a summary of the European academic and industrial status on RF GaN is given....
ABSTRACT — The paper presents an overview on the European status of electronic devices for micro- an...
It is the most exciting time for power electronics in decades. The combination of new applications, ...
The depth of Euronitride research continues to unfold as more results become available and, judging ...