GaN Device Technology: Manufacturing, Characterization, Modelling and Verification.
- W. CICCOGNANI
- F. GIANNINI
- E. LIMITI
- P. E. LONGHI
- A. NANNI
- A. SERINO
- C. LANZIERI
- M. PERONI
- P. ROMANINI
- CAMARCHIA, VITTORIO
- PIROLA, Marco
- GHIONE, GIOVANNI
Publication date
January 2008
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
Gallium Nitride's superior physical properties, in comparison with other semiconductors, make GaNHEMT active devices a prime candidate in the implementation of next generation transmitters for radar systems, 3G/4G base stations and WiMAX. In this contribution, the characterization, modelling and verification of different families of high efficiency, high- power devices manufactured at SELEX Sistemi Integrati are reported. Process, characterization and modelling phases are analyzed to improve and refine the technology's fabrication techniques, thermal degradation issues and dispersion phenomena
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