AbstractTremendous progress has been made in recent years in the growth, doping and processing technologies of the wide bandgap semiconductors. The principal driving force behind this activity is the potential use of, for example, the 1114 nitrides in high-power, high-temperature, high-frequency electronic and optical devices resistant to radiation damage. This article reports the current state of the art for producing some selected devices from the III-V nitrides
This thesis work features the exploration of the capabilities and limitations of devices based on MB...
The group III-nitride system of materials has had considerable commercial success in recent years in...
This book gives a survey of the current state of the art of a special class of nitrides semiconducto...
AbstractTremendous progress has been made in recent years in the growth, doping and processing techn...
The group III-nitride semiconductors are enjoying an ever-increasing research interest from compou...
III-nitride wide bandgap semiconductors, such as GaN, InN, A1N and their ternary or quaternary alloy...
The revised edition of this important book presents updated and expanded coverage of light emitting ...
A wide variety of group III-Nitride-based photonic and electronic devices have opened a new era in t...
The III-nitride semiconductor materials have wide direct bandgap ranging from 6.2 eV (AlN); through ...
The III-nitride semiconductor materials have wide direct bandgap ranging from 6.2 eV (AlN); through ...
AbstractIn this article the business and technology of III–V semiconductor devices will be overviewe...
This paper summarizes some of the recent advances made on III-nitride ultraviolet photonics material...
This thesis investigates the emerging technology of ultraviolet light-emitting diodes (UV LEDs) base...
Light emitting diodes (LEDs) are already used in traffic signals, signage lighting, and automotive a...
The III-Nitride semiconductors and their nanostructures have achieved tremendous advances in both ma...
This thesis work features the exploration of the capabilities and limitations of devices based on MB...
The group III-nitride system of materials has had considerable commercial success in recent years in...
This book gives a survey of the current state of the art of a special class of nitrides semiconducto...
AbstractTremendous progress has been made in recent years in the growth, doping and processing techn...
The group III-nitride semiconductors are enjoying an ever-increasing research interest from compou...
III-nitride wide bandgap semiconductors, such as GaN, InN, A1N and their ternary or quaternary alloy...
The revised edition of this important book presents updated and expanded coverage of light emitting ...
A wide variety of group III-Nitride-based photonic and electronic devices have opened a new era in t...
The III-nitride semiconductor materials have wide direct bandgap ranging from 6.2 eV (AlN); through ...
The III-nitride semiconductor materials have wide direct bandgap ranging from 6.2 eV (AlN); through ...
AbstractIn this article the business and technology of III–V semiconductor devices will be overviewe...
This paper summarizes some of the recent advances made on III-nitride ultraviolet photonics material...
This thesis investigates the emerging technology of ultraviolet light-emitting diodes (UV LEDs) base...
Light emitting diodes (LEDs) are already used in traffic signals, signage lighting, and automotive a...
The III-Nitride semiconductors and their nanostructures have achieved tremendous advances in both ma...
This thesis work features the exploration of the capabilities and limitations of devices based on MB...
The group III-nitride system of materials has had considerable commercial success in recent years in...
This book gives a survey of the current state of the art of a special class of nitrides semiconducto...
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