Gallium-nitride is an emerging power semiconductor technology with considerable promise for applications requiring compact and efficient power conversion at competitive cost. In this paper gallium-nitride power electronic devices, circuits, and applications are reviewed and compared in terms of device specifications, circuit topologies, and cost.3 page(s
Theoretical thesis.Bibliography: pages 54-59.Chapter 1.Introduction -- Chapter 2. Literature review ...
The evolution of wide-bandgap semiconductor transistor technology is placed in historical context wi...
This article provides a comprehensive review of wide and ultrawide bandgap power electronic semicond...
It is the most exciting time for power electronics in decades. The combination of new applications, ...
This paper presents a general overview of nowadays Gallium Nitride power transistor technology and s...
The world of electronics industry has been increasing rapidly and expanding widely in the past three...
Increasing attention has been drawn to Gallium Nitride (GaN) based power devices, since its superior...
Power electronics represents 20 % of the total electronics industry and it plays a key role in many ...
International audienceThis presentation will deal with our work on gallium nitride (GaN) devices for...
Gallium nitride (GaN) technology is being adopted in a variety of power electronic applications due ...
Enhancement mode gallium nitride transistors have been commercially available for over three years a...
Between 5 and 10% of the world's electricity is wasted as dissipated heat in the power electronic ci...
Gallium nitride (GaN) has emerged as a promising material for development of power semiconductor dev...
Over the past decade, gallium nitride has emerged as an excellent semiconductor for the fabrication ...
Gallium Nitride (GaN) based power devices have been demonstrated to deliver higher energy efficiency...
Theoretical thesis.Bibliography: pages 54-59.Chapter 1.Introduction -- Chapter 2. Literature review ...
The evolution of wide-bandgap semiconductor transistor technology is placed in historical context wi...
This article provides a comprehensive review of wide and ultrawide bandgap power electronic semicond...
It is the most exciting time for power electronics in decades. The combination of new applications, ...
This paper presents a general overview of nowadays Gallium Nitride power transistor technology and s...
The world of electronics industry has been increasing rapidly and expanding widely in the past three...
Increasing attention has been drawn to Gallium Nitride (GaN) based power devices, since its superior...
Power electronics represents 20 % of the total electronics industry and it plays a key role in many ...
International audienceThis presentation will deal with our work on gallium nitride (GaN) devices for...
Gallium nitride (GaN) technology is being adopted in a variety of power electronic applications due ...
Enhancement mode gallium nitride transistors have been commercially available for over three years a...
Between 5 and 10% of the world's electricity is wasted as dissipated heat in the power electronic ci...
Gallium nitride (GaN) has emerged as a promising material for development of power semiconductor dev...
Over the past decade, gallium nitride has emerged as an excellent semiconductor for the fabrication ...
Gallium Nitride (GaN) based power devices have been demonstrated to deliver higher energy efficiency...
Theoretical thesis.Bibliography: pages 54-59.Chapter 1.Introduction -- Chapter 2. Literature review ...
The evolution of wide-bandgap semiconductor transistor technology is placed in historical context wi...
This article provides a comprehensive review of wide and ultrawide bandgap power electronic semicond...
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