Publication date
January 2019
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
A new form of thin film transistor named the source-gated transistor (SGT) is described. The current is determined by a source barrier located opposite a gate that controls the effective source barrier height. The SGT has several advantages compared with a standard FET These include a much lower saturation voltage, higher output impedance and in the case of amorphous silicon, a much better stability.</p
Add to ORKG