Source-gated transistors (SGTs) comprise a blocking contact or potential barrier at the source, which control the current. The paper describes how SGTs can be optimized for particular applications and for specific semiconductor material systems. It is shown how the saturation voltage can be designed to be an order of magnitude smaller than in equivalent FETs to give power savings of over 50% for the same current output. The SGT also achieves a better saturation regime, with lower output conductance over a larger range of drain voltages. Flat-panel lighting, remote sensing and signal processing and large-area circuits made using inexpensive but imprecise patterning techniques are some of the applications which could benefit from incorporatin...
In order to deliver billions of cost-effective sensors for Internet of Things applications, large ar...
This thesis is concerned with new devices named Source-Gated Transistors (SGT) prepared in hydrogena...
Self-aligned Schottky-source source-gated transistors (SGTs) have been made in polysilicon. The stru...
Source-gated transistors (SGTs) comprise a blocking contact or potential barrier at the source, whic...
A new form of thin film transistor named the source-gated transistor (SGT) is described. The current...
The source-gated transistor (SGT) is a new type of transistor in which the current is controlled by ...
The performance benefits of using source-gated transistors (SGTs) in analog large-area electronic ci...
Emissive displays require high-efficiency linear drivers which are stable under electrical stress an...
Source-gated transistors (SGTs) have potentially very high output impedance and low saturation volta...
Source-gated transistors (SGTs) are three-terminal devices in which the current is controlled by a p...
A physical description of low-field behavior of a Schottky source-gated transistor (SGT) is outlined...
We show that the source-gated transistor has two distinct modes of operation. In the low-field mode,...
© The Electrochemical Society.Source-gated thin-film transistors (SGTs) have remarkable properties r...
We describe the physics of the turn-off mechanism in source-gated transistors (SGTs), which is disti...
We show that the source-gated transistor has two distinct modes of operation. In the low-field mode,...
In order to deliver billions of cost-effective sensors for Internet of Things applications, large ar...
This thesis is concerned with new devices named Source-Gated Transistors (SGT) prepared in hydrogena...
Self-aligned Schottky-source source-gated transistors (SGTs) have been made in polysilicon. The stru...
Source-gated transistors (SGTs) comprise a blocking contact or potential barrier at the source, whic...
A new form of thin film transistor named the source-gated transistor (SGT) is described. The current...
The source-gated transistor (SGT) is a new type of transistor in which the current is controlled by ...
The performance benefits of using source-gated transistors (SGTs) in analog large-area electronic ci...
Emissive displays require high-efficiency linear drivers which are stable under electrical stress an...
Source-gated transistors (SGTs) have potentially very high output impedance and low saturation volta...
Source-gated transistors (SGTs) are three-terminal devices in which the current is controlled by a p...
A physical description of low-field behavior of a Schottky source-gated transistor (SGT) is outlined...
We show that the source-gated transistor has two distinct modes of operation. In the low-field mode,...
© The Electrochemical Society.Source-gated thin-film transistors (SGTs) have remarkable properties r...
We describe the physics of the turn-off mechanism in source-gated transistors (SGTs), which is disti...
We show that the source-gated transistor has two distinct modes of operation. In the low-field mode,...
In order to deliver billions of cost-effective sensors for Internet of Things applications, large ar...
This thesis is concerned with new devices named Source-Gated Transistors (SGT) prepared in hydrogena...
Self-aligned Schottky-source source-gated transistors (SGTs) have been made in polysilicon. The stru...