Emissive displays require high-efficiency linear drivers which are stable under electrical stress and can deliver uniform performance across a large area. Owing to their low saturation voltage and flat saturation characteristic, source-gated transistors (SGTs) are ideally suited to act as power-efficient driving transistors in active matrix backplanes for lighting, low-power signage and display screens. It is shown that SGTs are also very stable during electrical stress. The technology is compatible with standard TFT fabrication allowing FET and SGT devices to be integrated in the same design and fabrication run
In conventional organic field-effect transistors (OFETs), the low mobility of carriers in the organi...
A physical description of low-field behavior of a Schottky source-gated transistor (SGT) is outlined...
Self-aligned Schottky-source source-gated transistors (SGTs) have been made in polysilicon. The stru...
Emissive displays require high-efficiency linear drivers which are stable under electrical stress an...
Source-gated transistors (SGTs) comprise a blocking contact or potential barrier at the source, whic...
The performance benefits of using source-gated transistors (SGTs) in analog large-area electronic ci...
Contrary to conventional design principles, currentdriven pixel drivers based on source-gated transi...
A new form of thin film transistor named the source-gated transistor (SGT) is described. The current...
The source-gated transistor (SGT) is a new type of transistor in which the current is controlled by ...
Source-gated transistors (SGTs) have potentially very high output impedance and low saturation volta...
In order to deliver billions of cost-effective sensors for Internet of Things applications, large ar...
Through their high gain and low saturation voltage, source-gated transistors (SGTs) have application...
Through their high gain and low saturation voltage, source-gated transistors (SGTs) have application...
We describe the physics of the turn-off mechanism in source-gated transistors (SGTs), which is disti...
Source-gated transistors (SGTs) are three-terminal devices in which the current is controlled by a p...
In conventional organic field-effect transistors (OFETs), the low mobility of carriers in the organi...
A physical description of low-field behavior of a Schottky source-gated transistor (SGT) is outlined...
Self-aligned Schottky-source source-gated transistors (SGTs) have been made in polysilicon. The stru...
Emissive displays require high-efficiency linear drivers which are stable under electrical stress an...
Source-gated transistors (SGTs) comprise a blocking contact or potential barrier at the source, whic...
The performance benefits of using source-gated transistors (SGTs) in analog large-area electronic ci...
Contrary to conventional design principles, currentdriven pixel drivers based on source-gated transi...
A new form of thin film transistor named the source-gated transistor (SGT) is described. The current...
The source-gated transistor (SGT) is a new type of transistor in which the current is controlled by ...
Source-gated transistors (SGTs) have potentially very high output impedance and low saturation volta...
In order to deliver billions of cost-effective sensors for Internet of Things applications, large ar...
Through their high gain and low saturation voltage, source-gated transistors (SGTs) have application...
Through their high gain and low saturation voltage, source-gated transistors (SGTs) have application...
We describe the physics of the turn-off mechanism in source-gated transistors (SGTs), which is disti...
Source-gated transistors (SGTs) are three-terminal devices in which the current is controlled by a p...
In conventional organic field-effect transistors (OFETs), the low mobility of carriers in the organi...
A physical description of low-field behavior of a Schottky source-gated transistor (SGT) is outlined...
Self-aligned Schottky-source source-gated transistors (SGTs) have been made in polysilicon. The stru...