ELECTROPHYSICAL PROPERTIES AND METASTABLE PROCESSES IN a-Si:H AND ALLOYS BASED ON IT

It has been established that the mechanism of effect of the microstructural inhomogeneities of the electronic spectrum of the state density and electrophysical properties of a-Si:H obtained at high rates of precipitation is determined by characteristic concentrations of [SiH*002] groups providing the optimum values of the electrophysical characteristics and stability of the material. It has been shown that the character of the effect of the boundary on the electrophysical properties and stability of the characteristics of the amorphous semiconductor - backing structures is connected with the formation of a low-ohmic conductance channel along the a-Si:H - dielectric boundary due to the presence of positive a builtin charge in the dielectric. Based on the Stabler - Vronski and DSK effect measurements made jointly for the first time, a common nature of the metastable defect annealing processes has been revealed; it is stipulated by a quasi-chemical reaction of Si-Si weak bonds and D*99O splitted bonds. It has been shown that the use of the process of material precipitation in the LF (55 kHz) glowdis charde plasma at high rates of the film growith is an advanced method of obtaining the material for high-stable instruments of solid-state electronicsAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio