Metastability of electronic states in a-si:h and its influence on material properties and thin-film transistor parameters

The work covers the thin films of the amorphous hydrogenizated silicon for making thin-film transistors. The aim is to determine the physical nature of electronic metastability states in a-Si:H and to develop the methods for increasing parameter stability of the films and transistors on their base. The mechanism of the atomic-structural metastability in the conditions of intensive recombination has been experimentally confirmed for a-Si:H films. The model determining the connection between film parameters and transistor characteristics on their base has been first proposed. A number of the concrete technological procedures for improving a-Si:H transistor parameters has been proposed. The methods for proximate control of the a-Si:H film properties have been developed. The methods for proximate control of the a-Si:H film properties have been introduced in the Research Institute of Molecular ElectronicsAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio