In this paper we will breifly review some basic experimental phenomena characteristic to the unique metastable defects in a-Si:H and the progress in the understanding of the phenomena.We argue that the breaking of Si-H bonds may play a very important role in the formation of the metastable defect...In this paper we will breifly review some basic experimental phenomena characteristic to the unique metastable defects in a-Si:H and the progress in the understanding of the phenomena.We argue that the breaking of Si-H bonds may play a very important role in the formation of the metastable defect...Chinese Institute of Electronics(CIE)、IEEE Beijing Section
Abstract—Incorporation of hydrogen has a strong effect on the characteristics of silicon devices. A ...
It has been established that the mechanism of effect of the microstructural inhomogeneities of the e...
This paper has aimed at creating a more complete picture about the instability mechanism responsible...
We survey theoretical approaches to understanding the diverse metastable behavior in hydrogenated am...
A new model for the formation of metastable Staebler-Wronski defects in a-Si:H has been proposed. Th...
This chapter looks at whether thermal and light-induced annealing of metastable defects in a-Si:H dr...
A new microscopic and kinetic model of light-induced metastability in hydrogenated amorphous silicon...
A new model for the formation of metastable Staebler-Wronski (SW) defects in a-Si:H is proposed. The...
Light and annealing induced changes in Si-H bonds in undoped a-Si:H have been investigated by a diff...
In the recent years more and more theoretical and experimental evidence have been found that the hyd...
Intrinsic defects in hydrogenated amorphous silicon (a-Si : H) are investigated using ab initio mole...
We used density functional theory (DFT) calculations to model the interaction of hydrogen atoms and ...
The work covers the thin films of the amorphous hydrogenizated silicon for making thin-film transist...
This chapter looks at a comparison of dark and light-induced annealing of metastable defects in a-Si...
Surface oxidation and surface defect creation processes in a-Si:H films have been studied in detail ...
Abstract—Incorporation of hydrogen has a strong effect on the characteristics of silicon devices. A ...
It has been established that the mechanism of effect of the microstructural inhomogeneities of the e...
This paper has aimed at creating a more complete picture about the instability mechanism responsible...
We survey theoretical approaches to understanding the diverse metastable behavior in hydrogenated am...
A new model for the formation of metastable Staebler-Wronski defects in a-Si:H has been proposed. Th...
This chapter looks at whether thermal and light-induced annealing of metastable defects in a-Si:H dr...
A new microscopic and kinetic model of light-induced metastability in hydrogenated amorphous silicon...
A new model for the formation of metastable Staebler-Wronski (SW) defects in a-Si:H is proposed. The...
Light and annealing induced changes in Si-H bonds in undoped a-Si:H have been investigated by a diff...
In the recent years more and more theoretical and experimental evidence have been found that the hyd...
Intrinsic defects in hydrogenated amorphous silicon (a-Si : H) are investigated using ab initio mole...
We used density functional theory (DFT) calculations to model the interaction of hydrogen atoms and ...
The work covers the thin films of the amorphous hydrogenizated silicon for making thin-film transist...
This chapter looks at a comparison of dark and light-induced annealing of metastable defects in a-Si...
Surface oxidation and surface defect creation processes in a-Si:H films have been studied in detail ...
Abstract—Incorporation of hydrogen has a strong effect on the characteristics of silicon devices. A ...
It has been established that the mechanism of effect of the microstructural inhomogeneities of the e...
This paper has aimed at creating a more complete picture about the instability mechanism responsible...