Electron holes transfer and states density in amorphous hydrogenated silicon

Subject of inquiry: amorphous hudrogenated silicon obtained by high-frequency decomposition of silane-carrying gases (a-Si:H). The aim of the work is to determine experimentally ( mu tau )"("p) depending on epsilon _F Fermi level condition and on states density in the gap of mobility a-Si:H under epsilon _F position changing at the expense of conditions variations of specimens preparation (pseudodoping) and at the expense of doping by boron. For the first time there has been ascertained that ( mu tau )"P, ( mu tau )"("n") and defects N_D concentration are determined by epsilon _F position in E_g both for pseudodoped and for doped by boron a-Si:H. For the first time there has been shown a possibility to control photoelectric properties of a-Si:H when obtaining films in triode system of high-frequency decomposition of silan-carrying mixtures without special doping. The results of the work have been utilized at "Electron" All-Russian Scientific-Research Institute when developing new models of vidicons with targets made of amorphous silicon. Field of application: vidicons, solar photocells, electrophotographyAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio