Add to ORKGThe strain configuration in CdTe/ZnTe strained-layer superlattices has been measured by Raman scattering near resonance. The ZnTe-like longitudinal optical phonon energy in the superlattice is significantly shifted from the bulk value to lower energies and the shift increases with increasing superlattice CdTe fraction. The observed shifts agree with calculations of strain shifts based on a free-standing strain distribution
International audienceWe present a detailed analysis of x-ray double-diffraction rocking-curve measu...
The multiphonon Raman scattering of microscopic interface phonon mode in CdSe/ZnTe superlattice has ...
Self-organised Ge dot superlattices grown by molecular beam epitaxy of Ge and Si layers utilizing S...
The strain configuration in CdTe/ZnTe strained-layer superlattices has been measured by Raman scatte...
ZnTe/Zn1-xMnxTe superlattices were grown on GaAs (001) substrates by molecular beam epitaxy. The mul...
Raman scattering experiments were performed in a temperature range from 13K to 300K for the diluted ...
The Raman spectra of the II-VI wide band-gap compound ZnSe-ZnTe semiconductor strained-layer superla...
ZnTe/Zn1-xMnxTe superlattices were grown on GaAs (001) substrates by molecular beam epitaxy. The mul...
Spatially selective introduction of ultrathin ZnTe layers (1 to 3 mono-layers) into CdTe allows the ...
We have observed oscillatory structure in the excitation spectra of CdTe/CdxMN1-xTe superlattices. A...
We report the occurrence of confined longitudinal and transverse optical phonons in (CdTe)n(ZnTe)n (...
We present Raman scattering by optical phonons in self-assembled Ge quantum dot superlattices grown ...
International audienceWe present a detailed investigation of the combined effects of band offsets an...
[[abstract]]The effects of strain on the band structure, the band gap, and optical properties of the...
The structure of CdTe/ZnTe superlattices has been analyzed through θ/2θ x‐ray diffraction, photolumi...
International audienceWe present a detailed analysis of x-ray double-diffraction rocking-curve measu...
The multiphonon Raman scattering of microscopic interface phonon mode in CdSe/ZnTe superlattice has ...
Self-organised Ge dot superlattices grown by molecular beam epitaxy of Ge and Si layers utilizing S...
The strain configuration in CdTe/ZnTe strained-layer superlattices has been measured by Raman scatte...
ZnTe/Zn1-xMnxTe superlattices were grown on GaAs (001) substrates by molecular beam epitaxy. The mul...
Raman scattering experiments were performed in a temperature range from 13K to 300K for the diluted ...
The Raman spectra of the II-VI wide band-gap compound ZnSe-ZnTe semiconductor strained-layer superla...
ZnTe/Zn1-xMnxTe superlattices were grown on GaAs (001) substrates by molecular beam epitaxy. The mul...
Spatially selective introduction of ultrathin ZnTe layers (1 to 3 mono-layers) into CdTe allows the ...
We have observed oscillatory structure in the excitation spectra of CdTe/CdxMN1-xTe superlattices. A...
We report the occurrence of confined longitudinal and transverse optical phonons in (CdTe)n(ZnTe)n (...
We present Raman scattering by optical phonons in self-assembled Ge quantum dot superlattices grown ...
International audienceWe present a detailed investigation of the combined effects of band offsets an...
[[abstract]]The effects of strain on the band structure, the band gap, and optical properties of the...
The structure of CdTe/ZnTe superlattices has been analyzed through θ/2θ x‐ray diffraction, photolumi...
International audienceWe present a detailed analysis of x-ray double-diffraction rocking-curve measu...
The multiphonon Raman scattering of microscopic interface phonon mode in CdSe/ZnTe superlattice has ...
Self-organised Ge dot superlattices grown by molecular beam epitaxy of Ge and Si layers utilizing S...