ZnTe/Zn1-xMnxTe superlattices were grown on GaAs (001) substrates by molecular beam epitaxy. The multi-phonon processes including overtones and combinations of optical phonons have been studied by near resonant Raman scattering in the temperature range 13 K to 300 K. The strain arising from lattice mismatch gives rise to a shift in the optical-phonon frequencies. A two-phonon interface mode of superlattice has been observed and identified for the first time. Strain-induced red shifts of exciton energies related to transitions from the conduction subband to the light-hole and heavy-hole subband have been found by photoreflectance measurements. Experimental results agree well with the calculated strain-induced shift in superlattices.Materials...
Epitaxial layers of GaAs grown on Si substrates, where the layer thickness greatly exceeds any criti...
Epitaxial layers of GaAs grown on Si substrates, where the layer thickness greatly exceeds any criti...
Epitaxial layers of GaAs grown on Si substrates, where the layer thickness greatly exceeds any criti...
ZnTe/Zn1-xMnxTe superlattices were grown on GaAs (001) substrates by molecular beam epitaxy. The mul...
Raman scattering experiments were performed in a temperature range from 13K to 300K for the diluted ...
The photoluminescence, photo-reflectance and Raman spectra of ZnTe/Zn1-xMnxTe superlattice samples g...
The strain configuration in CdTe/ZnTe strained-layer superlattices has been measured by Raman scatte...
The photoluminescence, photoreflectance and Raman spectra of ZnTe/Zn(1-x) Mn,Te superlattice samples...
The strain configuration in CdTe/ZnTe strained-layer superlattices has been measured by Raman scatte...
The Raman spectra of the II-VI wide band-gap compound ZnSe-ZnTe semiconductor strained-layer superla...
We report the strain effects of Zn1-xMn(x)Se superlattices of II -VI diluted magnetic semiconductors...
We present Raman scattering by optical phonons in self-assembled Ge quantum dot superlattices grown ...
Phonon dispersion in strained heterovalent (Si)n/(GaAs)m (001) superlattices has been calculated usi...
Phonon dispersion in strained heterovalent (Si)n/(GaAs)m (001) superlattices has been calculated usi...
The determination of elastic strain in MOVPE-grown ZnTe epitaxial layers on (100)GaAs by ion channel...
Epitaxial layers of GaAs grown on Si substrates, where the layer thickness greatly exceeds any criti...
Epitaxial layers of GaAs grown on Si substrates, where the layer thickness greatly exceeds any criti...
Epitaxial layers of GaAs grown on Si substrates, where the layer thickness greatly exceeds any criti...
ZnTe/Zn1-xMnxTe superlattices were grown on GaAs (001) substrates by molecular beam epitaxy. The mul...
Raman scattering experiments were performed in a temperature range from 13K to 300K for the diluted ...
The photoluminescence, photo-reflectance and Raman spectra of ZnTe/Zn1-xMnxTe superlattice samples g...
The strain configuration in CdTe/ZnTe strained-layer superlattices has been measured by Raman scatte...
The photoluminescence, photoreflectance and Raman spectra of ZnTe/Zn(1-x) Mn,Te superlattice samples...
The strain configuration in CdTe/ZnTe strained-layer superlattices has been measured by Raman scatte...
The Raman spectra of the II-VI wide band-gap compound ZnSe-ZnTe semiconductor strained-layer superla...
We report the strain effects of Zn1-xMn(x)Se superlattices of II -VI diluted magnetic semiconductors...
We present Raman scattering by optical phonons in self-assembled Ge quantum dot superlattices grown ...
Phonon dispersion in strained heterovalent (Si)n/(GaAs)m (001) superlattices has been calculated usi...
Phonon dispersion in strained heterovalent (Si)n/(GaAs)m (001) superlattices has been calculated usi...
The determination of elastic strain in MOVPE-grown ZnTe epitaxial layers on (100)GaAs by ion channel...
Epitaxial layers of GaAs grown on Si substrates, where the layer thickness greatly exceeds any criti...
Epitaxial layers of GaAs grown on Si substrates, where the layer thickness greatly exceeds any criti...
Epitaxial layers of GaAs grown on Si substrates, where the layer thickness greatly exceeds any criti...