Measurements of electron beam induced currents (EBIC) can either be performed in a scanning electron microscope (SEM) or in a scanning tunneling microscope (STM), since both microscopes are very similar in their basic assembly. However, a straightforward application of an STM in EBIC-measurements, i.e. the use of a microscope tip as a fine source for low energetic electrons is not possible due to the specific demands on the instrument in an EBIC application. The present paper gives a compilation of these demands and describes their conversion into an optimized STM-EBIC microscope
International audienceA silicon p-n junction has been mapped using electron beam induced current in ...
Abstract: Electron tomography (ET) is a powerful tool to determine the three-dimensional (3D) struct...
In this paper, the physical mechanisms involved in electron beam induced current (EBIC) imaging of s...
Measurements of electron beam induced currents (EBIC) can either be performed in a scanning electron...
Recently, the first results of electron beam induced current (EBIC) measurements in a scanning tunne...
The electron-beam-induced current (EBIC) technique using scanning electron microscope (SEM) is one o...
An electron microscope's primary beam simultaneously ejects secondary electrons (SEs) from the sampl...
Scanning electron microscopy (SEM) represents a powerful tool for studying spatial structures in con...
The diffusion lengths of materials within semiconductor devices have a very strong impact on device ...
Scanning electron microscopy (SEM) is the most preferred method in microstructural analysis today. I...
This paper discusses the application of electron-beam-induced current (EBIC) technique as a tool whi...
A scanning tunneling microscope (STM) was developed to work in conjunction with a Hitachi S-4100 fi...
Voltage breakdown sites on thin (\u3c 100 A) MOS capacitors have been identified by the electron bea...
This paper discusses the modeling of the measurements which are performed with the charge-collection...
For investigation of doped areas, p-n junctions and defects in conventional SEM the EBIC (Electron B...
International audienceA silicon p-n junction has been mapped using electron beam induced current in ...
Abstract: Electron tomography (ET) is a powerful tool to determine the three-dimensional (3D) struct...
In this paper, the physical mechanisms involved in electron beam induced current (EBIC) imaging of s...
Measurements of electron beam induced currents (EBIC) can either be performed in a scanning electron...
Recently, the first results of electron beam induced current (EBIC) measurements in a scanning tunne...
The electron-beam-induced current (EBIC) technique using scanning electron microscope (SEM) is one o...
An electron microscope's primary beam simultaneously ejects secondary electrons (SEs) from the sampl...
Scanning electron microscopy (SEM) represents a powerful tool for studying spatial structures in con...
The diffusion lengths of materials within semiconductor devices have a very strong impact on device ...
Scanning electron microscopy (SEM) is the most preferred method in microstructural analysis today. I...
This paper discusses the application of electron-beam-induced current (EBIC) technique as a tool whi...
A scanning tunneling microscope (STM) was developed to work in conjunction with a Hitachi S-4100 fi...
Voltage breakdown sites on thin (\u3c 100 A) MOS capacitors have been identified by the electron bea...
This paper discusses the modeling of the measurements which are performed with the charge-collection...
For investigation of doped areas, p-n junctions and defects in conventional SEM the EBIC (Electron B...
International audienceA silicon p-n junction has been mapped using electron beam induced current in ...
Abstract: Electron tomography (ET) is a powerful tool to determine the three-dimensional (3D) struct...
In this paper, the physical mechanisms involved in electron beam induced current (EBIC) imaging of s...