The electron-beam-induced current (EBIC) technique using scanning electron microscope (SEM) is one of the powerful tools for the characterization and failure analysis of semiconductor materials and devices, particularly the characterization of the minority carriers transport properties. These include the determination of the diffusion length and the surface recombination velocity which have significant impacts on the functionality and performance of the semiconductor devices, for example, the photodiode and bipolar devices. In this thesis, the physical principles and the operating mechanisms of the EBIC and its host SEM are briefly discussed. This is followed by the literature review on the use of EBIC technique for the characterization ...
The present tutorial review provides a practical guide to the analysis of semiconductor devices usin...
For investigation of doped areas, p-n junctions and defects in conventional SEM the EBIC (Electron B...
We have developed a model of calculation of the induced current due to an electron beam. The expres...
The performance of bipolar and photodiode devices is determined by the transport properties of the m...
We present a novel method for determining semiconductor parameters such as diffusion length L, lifet...
The diffusion lengths of materials within semiconductor devices have a very strong impact on device ...
Master´s thesis is focused on diagnostics of semiconductor materials by EBIC method (measuring of cu...
The conventional method of extracting the minority carrier diffusion length using the electron beam-...
This paper discusses the modeling of the measurements which are performed with the charge-collection...
In this paper, the physical mechanisms involved in electron beam induced current (EBIC) imaging of s...
This research work presented in this thesis is concerned with the determination of material paramete...
An EBIC (Electron Beam Induced Current) microscopy system has been set up at the University of Surre...
Electron-Beam-Induced Current (EBIC) is a technique that makes use of the induced current generated ...
This thesis treats about semiconducting silicon structures. It describes the characteristics of the ...
Individual, well structurally characterised dislocations present in n-type silicon have been studied...
The present tutorial review provides a practical guide to the analysis of semiconductor devices usin...
For investigation of doped areas, p-n junctions and defects in conventional SEM the EBIC (Electron B...
We have developed a model of calculation of the induced current due to an electron beam. The expres...
The performance of bipolar and photodiode devices is determined by the transport properties of the m...
We present a novel method for determining semiconductor parameters such as diffusion length L, lifet...
The diffusion lengths of materials within semiconductor devices have a very strong impact on device ...
Master´s thesis is focused on diagnostics of semiconductor materials by EBIC method (measuring of cu...
The conventional method of extracting the minority carrier diffusion length using the electron beam-...
This paper discusses the modeling of the measurements which are performed with the charge-collection...
In this paper, the physical mechanisms involved in electron beam induced current (EBIC) imaging of s...
This research work presented in this thesis is concerned with the determination of material paramete...
An EBIC (Electron Beam Induced Current) microscopy system has been set up at the University of Surre...
Electron-Beam-Induced Current (EBIC) is a technique that makes use of the induced current generated ...
This thesis treats about semiconducting silicon structures. It describes the characteristics of the ...
Individual, well structurally characterised dislocations present in n-type silicon have been studied...
The present tutorial review provides a practical guide to the analysis of semiconductor devices usin...
For investigation of doped areas, p-n junctions and defects in conventional SEM the EBIC (Electron B...
We have developed a model of calculation of the induced current due to an electron beam. The expres...