High resolution EBIC imaging of shallow p-n junctions using FEG-SEM

For investigation of doped areas, p-n junctions and defects in conventional SEM the EBIC (Electron Beam Induced Current) imaging technique is widely applied with lateral resolutions down to the sub mu m range. In this contribution it is demonstrated that using very low beam energies in a FEG-SEM resolutions better than 0,2 mu m can be obtained. Regarding the optimisation of the voltage and the beam diameter best resolution was achieved between 1 and 1,5 kV. The utilisation of lowvoltage EBIC additionally proved to be more advantageous in determining the absolute dimensions of doped regions compared with other techniques