SOME ASPECTS OF THE MEASUREMENTS OF ELECTRICAL EFFECTS OF DISLOCATION IN SILICON USING A COMPUTERISED EBIC SYSTEM.

A system is described incorporating a PDP11/03 minicomputer for control and on-line data collection of a lock-in EBIC set up based on a JSM-35X SEM. The system has been primarily used for the measurement of EBIC contrast from individual deformation-induced dislocations in Si. In order to interpret the contrast results more fully, it is necessary to know the minority carrier diffusion length. This has been measured at 110K and 300K for a n-type Si specimen containing deformation induced dislocation networks. The significance of the results on the interpretation of the dislocation contrast measurements is described