CHARACTERIZATION OF DISLOCATIONS AND THEIR EFFECTS IN SILICON DEVICE TECHNOLOGY

On présente des études méthodiques des causes du contrast EBIC des dislocations et de son évaluation. On montre des applications de la méthode EBIC à la recherche de l'influence des dislocations sur les perfomances de composants, influence négative (augmentation du constant inverse) et positive (piégeage interne).Methodical studies on cause and valuation of the dislocation EBIC contrast are presented. The application of the EBIC method to investigations of negative (enhanced reverse current) and positive (intrinsic gettering) effects of dislocations on device performance are demonstrated