Add to ORKGA new theory is proposed for recombination at charged dislocations in semiconductors. This is applied to EBIC contrast from individual dislocations
The energy bands associated with dislocations in gallium arsenide create, even in the space charge r...
The recent results of the EBIC investigations of dislocations in Si demonstrating the influence of p...
Cette communication examine l'évaluation quantitative des images des dislocations dans les semicondu...
The SEM EBIC contrast for individual screw and 60 degree dislocations formed in high-purity, n-type ...
The SEM EBIC contrast for individual screw and 60 degree dislocations formed in high-purity, n-type ...
A physical model of the electron-beam-induced contrast (EBIC) of dislocations perpendicular to the s...
The methodology of quantitative SEM-CL/EBIC investigations for the evaluation of the recombination d...
On revoit ici les récents résultats sur la recombinaison de porteurs aux dislocations dans Si et GaP...
Recombination at dislocations located in the space charge region (SCR) of a Schottky diode has been ...
Individual, well structurally characterised dislocations present in n-type silicon have been studied...
Cet article résume les principaux résultats obtenus par les techniques EBIC et Cathodoluminescence (...
Individual, well structurally characterised dislocations present in n-type silicon have been studied...
In some recent papers the measurements by Ourmazd et al. (J. Physique Colloq. 44 (1983) C4-289) of t...
In some recent papers the measurements by Ourmazd et al. (J. Physique Colloq. 44 (1983) C4-289) of t...
On peut, en principe, lier le contraste des images obtenues par EBIC de défauts étendus dans les sem...
The energy bands associated with dislocations in gallium arsenide create, even in the space charge r...
The recent results of the EBIC investigations of dislocations in Si demonstrating the influence of p...
Cette communication examine l'évaluation quantitative des images des dislocations dans les semicondu...
The SEM EBIC contrast for individual screw and 60 degree dislocations formed in high-purity, n-type ...
The SEM EBIC contrast for individual screw and 60 degree dislocations formed in high-purity, n-type ...
A physical model of the electron-beam-induced contrast (EBIC) of dislocations perpendicular to the s...
The methodology of quantitative SEM-CL/EBIC investigations for the evaluation of the recombination d...
On revoit ici les récents résultats sur la recombinaison de porteurs aux dislocations dans Si et GaP...
Recombination at dislocations located in the space charge region (SCR) of a Schottky diode has been ...
Individual, well structurally characterised dislocations present in n-type silicon have been studied...
Cet article résume les principaux résultats obtenus par les techniques EBIC et Cathodoluminescence (...
Individual, well structurally characterised dislocations present in n-type silicon have been studied...
In some recent papers the measurements by Ourmazd et al. (J. Physique Colloq. 44 (1983) C4-289) of t...
In some recent papers the measurements by Ourmazd et al. (J. Physique Colloq. 44 (1983) C4-289) of t...
On peut, en principe, lier le contraste des images obtenues par EBIC de défauts étendus dans les sem...
The energy bands associated with dislocations in gallium arsenide create, even in the space charge r...
The recent results of the EBIC investigations of dislocations in Si demonstrating the influence of p...
Cette communication examine l'évaluation quantitative des images des dislocations dans les semicondu...